2N6764, 2N6766, 2N6768 and 2N6770 Qualified Levels: N-CHANNEL MOSFET JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/543 versions DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N6764, 2N6766, 2N6768 and 2N6770 NOTES: 1. Derate linearly by 1.2 W/C for T > +25 C. C 2. The following formula derives the maximum theoretical I limit. I is limited by package and internal wires and may also be limited by D D pin diameter: 3. I = 4 x I as calculated in note 2. DM D1 MECHANICAL and PACKAGING CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on commercial grade only. MARKING: Manufacturer s ID, part number, date code. WEIGHT: Approximately 12.7 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6764 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. di/dt I Forward current F R Gate drive impedance G V Drain supply voltage DD V Drain source voltage, dc DS V Gate source voltage, dc GS T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 2 of 9