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V = 10 V, I = 25 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors PowerTrench process that has been tailored High Performance Trench Technology for Extremely Low to minimize the on-state resistance while maintaining superior R DS(on) switching performance. Low Gate Charge Applications High Power and Current Handing Capability Synchronous Rectification Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FDB2710 Unit V Drain-Source Voltage 250 V DS V Gate-Source voltage 30 V GS I Drain Current - Continuous (T = 25C) 50 A D C - Continuous (T = 100C) 31.3 A C (Note 1) I Drain Current - Pulsed A DM See Figure 9 (Note 2) E Single Pulsed Avalanche Energy 145 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 260 W D C - Derate above 25C 2.1 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB2 710 Unit R Thermal Resistance, Junction-to-Case, Max. 0.48 C/W JC R Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W JA 2 R 40 C/W Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. JA 200 6 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB2710 Rev. C1