MOSFET - UniFET , N-Channel 300 V, 28 A, 129 m FDB28N30TM Description UniFET MOSFET is ON Semiconductors high voltage www.onsemi.com MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce onstate resistance, and to provide NChannel better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter D applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features G Typical R = 108 m at V = 10 V, I = 14 A DS(on) GS D Low Gate Charge (Typical Q = 39 nC) g Low Reverse Transfer Capacitance C (Typical C = 35 pF) rss rss S 100% Avalanche Tested This Device is PbFree and is RoHS Compliant D Applications Uninterruptible Power Supply ACDC Power Supply G S 2 D PAK3 (TO263, 3LEAD) CASE 418AJ MARKING DIAGRAM Y&Z&3&K FDB28N30 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDB28N30 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: April, 2020 Rev. 1 FDB28N30TM/DFDB28N30TM MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Ratings Units V Drain to Source Voltage 300 V DSS V Gate to Source Voltage 30 V GSS I A Drain Current Continuous (T = 25C) 28 D C Continuous (T = 100C) 19 C I A Drain Current Pulsed (Note 1) 112 DM E Single Pulsed Avalanche Energy (Note 2) 588 mJ AS I Avalanche Current (Note 1) 28 A AR E Repetitive Avalanche Energy (Note 1) 25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 250 W D C Derate above 25C 2.0 W/C TJ, T Operating and Storage Temperature Range 55 to +150 C STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature 2. L = 1.5 mH, I = 28 A, V = 50 V, R = 25 , starting T = 25C AS DD G J 3. I 28 A, di/dt 200 A/ s, V BV , starting T = 25C SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter Ratings Units RJC Maximum Thermal Resistance, Junction to Case 0.5 C/W RJA Maximum Thermal Resistance, Junction to Ambient 40 C/W (1 in2 Pad of 2oz Copper) RJA Maximum Thermal Resistance, Junction to Ambient 62.5 C/W (Minimum Pad of 2oz Copper) PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping 2 FDB28N30TM FDB28N30 D PAK3 (TO263, 3LEAD) 800 units / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2