FDBL0630N150 MOSFET N-Channel, POWERTRENCH 150 V, 169 A, 6.3 m Features www.onsemi.com Typ r = 5 m at V = 10 V, I = 80 A DS(on) GS D Typ Q = 70 nC at V = 10 V, I = 80 A g(tot) GS D V r MAX I MAX DSS DS(ON) D UIS Capability 150 V 6.3 m 10 V 169 A This Device is PbFree and is RoHS Compliant Applications D Industrial Motor Drive Industrial Power Supply Industrial Automation G Battery Operated tools Battery Protection S Solar Inverters MOSFET NChannel UPS and Energy Inverters Energy Storage Load Switch MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 150 V HPSOF8L 11.68x9.80 CASE 100CU VGS Gate to Source Voltage 20 V I Drain Current Continuous (V = 10 V) 169 A D GS (Note 1) T = 25 C MARKING DIAGRAM C Pulsed Drain Current T = 25C See Figure 4 C EAS Single Pulse Avalanche Energy (Note 2) 502 mJ Y&Z&3&K P Power Dissipation 500 W D FDBL 0630N150 Derate above 25 C 3.3 W/ C T , T Operating and Storage Temperature 55 to +175 J STG C Thermal Resistance Junction to Case 0.3 C/W R JC Y = ON Semiconductor Logo C/W R Maximum Thermal Resistance Junction 43 JA &Z = Assembly Plant Code to Ambient (Note 3) &3 = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the &K = Lot Run Traceability Code device. If any of these limits are exceeded, device functionality should not be FDBL0630N150 = Specific Device Code assumed, damage may occur and reliability may be affected. 1. Current is limited by junction temperature. 2. Starting T = 25C, L = 0.24 mH, I = 64 A, V = 100 V during inductor J AS DD ORDERING INFORMATION charging and V = 0 V during time in avalanche. DD See detailed ordering and shipping information on page 6 of 3. R is the sum of the junction to case and case to ambient thermal JA this data sheet. resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC JA is determined by the users board design. The maximum rating presented 2 here is based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 3 FDBL0630N150/DFDBL0630N150 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS B Drain to Source Breakdown Voltage I = 250 A, V = 0 V 150 V D GS VDSS I Drain to Source Leakage Current V = 150 V, V = 0 V T = 25 C 1 A DS GS J DSS T = 175 C (Note 4) 1 mA J I Gate to Source Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.0 2.8 4.0 V GS(th) GS DS D I = 80 A, V = 10 V T = 25 C r Drain to Source On Resistance 5 6.3 m DS(on) D GS J T = 175 C (Note 4) 14 17.5 m J DYNAMIC CHARACTERISTICS V = 75V, V = 0V, f = 1 MHz C Input Capacitance 5805 pF DS GS iss C Output Capacitance 536 pF oss C Reverse Transfer Capacitance 16 pF rss R Gate Resistance f = 1 MHz 2.2 g Q Total Gate Charge at 10 V V = 0 to 10 V, V = 75 V, I = 80 A 70 90 nC g(ToT) GS DD D Q Threshold Gate Charge V = 0 to 2 V, V = 75 V, I = 80 A 10.5 13 nC g(th) GS DD D V = 75 V, I = 80 A Q Gate to Source Gate Charge 32.5 nC gs DD D Q Gate to Drain Miller Charge V = 75 V, I = 80 A 10 nC gd DD D SWITCHING CHARACTERISTICS V = 75 V, I = 80 A, V = 10 V, R = 6 t TurnOn Time 80 ns on DD D GS GEN t TurnOn Delay Time 39 ns d(on) t Rise Time 30 ns r t TurnOff Delay Time 70 ns d(off) t Fall Time 23 ns f t TurnOff Time 130 ns off DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Voltage I = 80 A, V = 0 V 1.25 V SD GS SD I = 40 A, V = 0 V 1.2 V SD GS I = 80 A, dI /dt = 100 A/ s, V = 120 V T Reverse Recovery Time 108 125 ns rr F SD DD Q Reverse Recovery Charge 323 467 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2