X-On Electronics has gained recognition as a prominent supplier of FDBL86062-F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDBL86062-F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDBL86062-F085 ON Semiconductor

FDBL86062-F085 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDBL86062-F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PTNG 100V N-Channel Power Trench MOSFET
Datasheet: FDBL86062-F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.1957 ea
Line Total: USD 10.2 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 4.2525

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 10.1957
10 : USD 6.6694
100 : USD 5.7166
500 : USD 5.1159
1000 : USD 4.5981
2000 : USD 4.3599

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDBL86062-F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDBL86062-F085 and other electronic components in the MOSFETs category and beyond.

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FDBL86062-F085 N-Channel POWERTRENCH MOSFET 100 V, 300 A, 2.0 m www.onsemi.com Features Typical R = 1.5 m at V = 10 V, I = 80 A DS(on) GS D D Typical Q = 95 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability Qualified to AEC Q101 G This Device is PbFree and is RoHS Compliant Applications S Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems HPSOF8L 11.68x9.80 CASE 100CU MARKING DIAGRAM Y&Z&3&K FDBL86062 Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot FDBL86062 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2019 Rev. 3 FDBL86062F085/DFDBL86062 F085 MOSFET MAXIMUM RATINGS T = 25C unless otherwise noted J Symbol Parameter Rating Units V DraintoSource Voltage 100 V DSS V GatetoSource Voltage 20 V GS I Drain Current - Continuous (V = 10) (Note 1) T = 25C 300 A D GS C Pulsed Drain Current T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 2) 352 mJ AS P Power Dissipation 429 W D Derate Above 25C 2.9 W/C T , T Operating and Storage Temperature 55 to +175 J STG C C/W R Thermal Resistance, Junction to Case 0.35 JC R Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by silicon. 2. Starting T = 25C, L = 0.1 mH, I = 84 A, V = 100 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. R is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDBL86062F085 FDBL86062 MO299A 13 24 mm 2000 Units ELECTRICAL CHARACTERISTICS T = 25C, unless otherwise noted J Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 100 V VDSS D GS I DraintoSource Leakage Current V = 100 V, T = 25C 5 A DSS DS J V = 0 V GS T = 175C (Note 4) 2 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.0 3.1 4.5 V GS(th) GS DS D R Drain to Source On Resistance I = 80 A, T = 25C 1.5 2.0 m DS(on) D J V = 10 V GS T = 175C (Note 4) 3.3 4.3 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 50 V, V = 0 V, 6970 pF iss DS GS f = 1 MHz C Output Capacitance 3950 oss C Reverse Transfer Capacitance 29 rss R Gate Resistance f = 1 MHz 0.4 g Q Total Gate Charge at 10 V V = 0 to 10 V V = 80 V 95 124 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 13 g(th) GS Q GatetoSource Gate Charge 31 gs Q GatetoDrain Miller Charge 20 gd www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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