FDBL86062-F085 N-Channel POWERTRENCH MOSFET 100 V, 300 A, 2.0 m www.onsemi.com Features Typical R = 1.5 m at V = 10 V, I = 80 A DS(on) GS D D Typical Q = 95 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability Qualified to AEC Q101 G This Device is PbFree and is RoHS Compliant Applications S Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems HPSOF8L 11.68x9.80 CASE 100CU MARKING DIAGRAM Y&Z&3&K FDBL86062 Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot FDBL86062 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2019 Rev. 3 FDBL86062F085/DFDBL86062 F085 MOSFET MAXIMUM RATINGS T = 25C unless otherwise noted J Symbol Parameter Rating Units V DraintoSource Voltage 100 V DSS V GatetoSource Voltage 20 V GS I Drain Current - Continuous (V = 10) (Note 1) T = 25C 300 A D GS C Pulsed Drain Current T = 25C See Figure 4 C E Single Pulse Avalanche Energy (Note 2) 352 mJ AS P Power Dissipation 429 W D Derate Above 25C 2.9 W/C T , T Operating and Storage Temperature 55 to +175 J STG C C/W R Thermal Resistance, Junction to Case 0.35 JC R Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by silicon. 2. Starting T = 25C, L = 0.1 mH, I = 84 A, V = 100 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. R is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDBL86062F085 FDBL86062 MO299A 13 24 mm 2000 Units ELECTRICAL CHARACTERISTICS T = 25C, unless otherwise noted J Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 100 V VDSS D GS I DraintoSource Leakage Current V = 100 V, T = 25C 5 A DSS DS J V = 0 V GS T = 175C (Note 4) 2 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.0 3.1 4.5 V GS(th) GS DS D R Drain to Source On Resistance I = 80 A, T = 25C 1.5 2.0 m DS(on) D J V = 10 V GS T = 175C (Note 4) 3.3 4.3 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 50 V, V = 0 V, 6970 pF iss DS GS f = 1 MHz C Output Capacitance 3950 oss C Reverse Transfer Capacitance 29 rss R Gate Resistance f = 1 MHz 0.4 g Q Total Gate Charge at 10 V V = 0 to 10 V V = 80 V 95 124 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 13 g(th) GS Q GatetoSource Gate Charge 31 gs Q GatetoDrain Miller Charge 20 gd www.onsemi.com 2