P2G N2G
N2D/P2D N1S/N2S
P1S/P2S N1D/P1D
P1G N1G
DMHC6070LSD
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary Features
2 x N + 2 x P Channels in a SOIC Package
I Max
D
Low On-Resistance
Device
V R Max
(BR)DSS DS(ON)
T = 25C
A
Low Input Capacitance
100m @ V = 10V 4.1A
GS
Fast Switching Speed
N-Channel 60V
120m @ V = 4.5V 3.7A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
170m @ V = -10V 3.1A
GS
Halogen and Antimony Free. Green Device (Note 3)
P-Channel -60V
250m @ V = -4.5V 2.6A
GS
Mechanical Data
Description
Case: SO-8
This new generation complementary MOSFET H-Bridge
Case Material: Molded Plastic,Gree Molding Compound.
features low on-resistance achievable with low gate drive.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminal Connections Indicator: See diagram
DC Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe.
DC-AC Inverters Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
H-Bridge
Top View
Top View
Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMHC6070LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMHC6070LSD
Maximum Ratings N-Channel (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage 20 V
VGSS
Steady T = +25C 3.1
A
A
I
D
State 2.5
T = +70C
A
Continuous Drain Current (Note 5) VGS = 10V
T = +25C 4.1
A
t<10s I A
D
3.3
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 5) 2.0 A
IS
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 15 A
I
DM
Avalanche Current (Note 6) L = 0.1mH 12 A
I
AS
Avalanche Energy (Note 6) L = 0.1mH 8 mJ
E
AS
Maximum Ratings P-Channel (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage -60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = 25C -2.4
A
A
I
D
State -1.9
T = 70C
A
Continuous Drain Current (Note 5) V = -10V
GS
T = 25C -3.1
A
t<10s I A
D
-2.5
T = 70C
A
Maximum Continuous Body Diode Forward Current (Note 5) -2.0 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -12 A
I
DM
Avalanche Current (Note 6) L = 0.1mH -12 A
I
AS
Avalanche Energy (Note 6) L = 0.1mH 8 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P 1.6 W
D
Steady State 75
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t<10s 45
C/W
Thermal Resistance, Junction to Case (Note 5) R 11
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
2 of 10
DMHC6070LSD April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38714 Rev. 1 - 2
NEW PRODUCT
ADVANCE INFORMATION