MOSFET POWERTRENCH N-Channel 80 V, 220 A, 3.0 m FDBL86366-F085 Features www.onsemi.com Typical R = 2.4 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 86 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers S Integrated Starter/Alternator NChannel Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Ratings Unit V V 80 DraintoSource Voltage DSS V V GatetoSource Voltage 20 GS HPSOF8L A CASE 100CU I Drain Current Continuous 220 D (V = 10), T = 25C (Note 1) GS C Pulsed Drain Current, T = 25C See Figure 4 MARKING DIAGRAM C mJ E Single Pulse Avalanche Energy 205 AS (Note 2) W P Power Dissipation 300 D Y&Z&3&K FDBL W/C 2.0 Derate Above 25C 86366 C T , T Operating and Storage Temperature 55 to +175 J STG C/W R Thermal Resistance, Junction to Case 0.5 JC C/W R Maximum Thermal Resistance, 43 JA Junction to Ambient (Note 3) Y = ON Semiconductor Logo &Z = Assembly Plant Code Stresses exceeding those listed in the Maximum Ratings table may damage the &3 = Numeric Date Code device. If any of these limits are exceeded, device functionality should not be &K = Lot Code assumed, damage may occur and reliability may be affected. 1. Current is limited by silicon. FDBL86366 = Specific Device Code 2. Starting T = 25C, L = 0.1 mH, I = 64 A, V = 80 V during inductor charging J AS DD and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA ORDERING INFORMATION resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R Device Top Mark Package Shipping JC JA is determined by the board design. The maximum rating presented here is FDBL86366 FDBL86366 HPSOF8L 2000 Units/ 2 based on mounting on a 1 in pad of 2oz copper. F085 Tape&Reel *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2020 Rev. 3 FDBL86366F085/DFDBL86366 F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV DraintoSource Breakdown Voltage 80 V I = 250 A, V = 0 V DSS D GS I DraintoSource Leakage Current V = 80 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage 2.0 3.0 4.0 V V = V , I = 250 A GS(th) GS DS D R Drain to Source on Resistance I = 80 A, T = 25C 2.4 3.0 m DS(on) D J V = 10 V GS T = 175C (Note 4) 4.9 6.1 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 6320 pF iss DS GS C Output Capacitance 1030 pF oss C Reverse Transfer Capacitance 32 pF rss R Gate Resistance f = 1 MHz 2.1 g Q Total Gate Charge at 10 V V = 0 to 10 V V = 64 V, 86 112 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 12 18 nC g(th) GS V = 64 V, I = 80 A Q GatetoSource Gate Charge 30 nC gs DD D Q GatetoDrain Miller Charge 18 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 40 V, I = 80 A, 98 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 30 ns d(on) t Rise Time 34 ns r t TurnOff Delay 40 ns d(off) t Fall Time 17 ns f t TurnOff Time 86 ns off DRAINSOURCE DIODE CHARACTERISTIC V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 1.25 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time I = 80 A, dI /dt = 100 A/ s, 80 120 ns rr F SD V = 64 V DD Q ReverseRecovery Charge 95 140 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2