FDBL9401L-F085 NChannel Logic Level PowerTrench MOSFET 40 V, 300 A, 0.55 m Features www.onsemi.com Typical R = 0.47 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 269 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability V R MAX I MAX DSS DS(ON) D Qualified to AEC Q101 40 V 0.55 m 10 V 300 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Applications Automotive Engine Control PowerTrain Management G Solenoid and Motor Drivers Integrated Starter/Alternator S Primary Switch for 12 V Systems N-CHANNEL MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit V Drain-to-Source Voltage 40 V DSS V Gate-to-Source Voltage 20 V GS I Drain Current Continuous, 300 A D (V = 10 V) T = 25C (Note 1) GS C HPSOF8L Pulsed Drain Current, T = 25C (See Figure 4) A C CASE 100CU E Single Pulse Avalanche Energy 913 mJ AS (Note 2) MARKING DIAGRAM P Power Dissipation 429 W D Derate Above 25C 2.86 W/C T , T Operating and Storage 55 to +175 C J STG Temperature &Z&3&K FDBL Stresses exceeding those listed in the Maximum Ratings table may damage the 9401L device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 530 H, I = 64 A, V = 40 V during inductor J AS DD charging and V = 0 V during time in avalanche. DD &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDBL9401L = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2018 Rev. 3 FDBL9401LF085/DFDBL9401LF085 THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 0.35 C/W JC R Thermal Resistance, Junction to Ambient (Note 3) 43 JA 3. R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2 oz copper. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain-to-Source Breakdown Voltage 40 V I = 250 A, V = 0 V DSS D GS I Drain-to-Source Leakage Current V = 40 V, V = 0 V A DSS DS GS T = 25C 1 J T = 175C (Note 4) 2000 J I Gate-to-Source Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 1 1.7 3 V GS(th) GS DS D R DraintoSource On Resistance V = 4.5 V, I = 80 A 0.59 0.76 m DS(on) GS D V = 10 V, I = 80 A m GS D T = 25C 0.47 0.55 J T = 175C (Note 4) 0.81 0.97 J DYNAMIC CHARACTERISTICS V = 20 V, V = 0 V, f = 1 MHz C Input Capacitance 19550 pF iss DS GS C Output Capacitance 5630 pF oss C Reverse Transfer Capacitance 509 pF rss R Gate Resistance V = 0.5 V, f = 1 MHz 2.8 g GS Q Total Gate Charge at 10 V V = 0 V to 10 V, V = 32 V, I = 80 A 269 376 nC g(tot) GS DD D Q Threshold Gate Charge V = 0 V to 1 V, V = 32 V, I = 80 A 17 nC g(th) GS DD D Q GatetoSource Gate Charge V = 32 V, I = 80 A 56 nC gs DD D Q GatetoDrain Miller Charge V = 32 V, I = 80 A 33 nC gd DD D SWITCHING CHARACTERISTICS t Turn-On Time V = 20 V, I = 80 A, V = 10 V, 150 ns on DD D GS R = 6 GEN t Turn-On Delay Time 27 ns d(on) t Turn-On Rise Time 49 ns r t Turn-Off Delay Time 196 ns d(off) t Turn-Off Fall Time 79 ns f t Turn-Off Time 412 ns off DRAIN-SOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 0.78 1.25 V SD SD GS I = 40 A, V = 0 V 0.74 1 SD GS t ReverseRecovery Time I = 80 A, dI /dt = 100 A/ s 130 195 ns rr F SD Q ReverseRecovery Charge 270 405 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2