X-On Electronics has gained recognition as a prominent supplier of DMTH3002LPS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMTH3002LPS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMTH3002LPS-13 Diodes Incorporated

DMTH3002LPS-13 electronic component of Diodes Incorporated
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Part No.DMTH3002LPS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 25V-30V
Datasheet: DMTH3002LPS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3685 ea
Line Total: USD 1.37 
Availability - 2348
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2348
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3685
10 : USD 1.0948
100 : USD 0.7682
500 : USD 0.6222
1000 : USD 0.575
2500 : USD 0.5279

   
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We are delighted to provide the DMTH3002LPS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMTH3002LPS-13 and other electronic components in the MOSFETs category and beyond.

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DMTH3002LPS Green 30V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features I Thermally Efficient Package Cooler Running Applications D BV R DSS DS(ON) T = +25C C <1.1mm Package Profile Ideal for Thin Applications 30V 1.6m V = 10V 240A High Conversion Efficiency GS Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Description Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) This new generation N-Channel Enhancement Mode MOSFET is Halogen and Antimony Free. Green Device (Note 3) designed to minimize R yet maintain superior switching DS(ON), Qualified to AEC-Q101 Standards for High Reliability performance. This device is ideal for use in power management and load switch. Mechanical Data Applications Case: PowerDI5060-8 (Type K) DC-DC Converters Case Material: Molded Plastic, Green Molding Compound Load Switch UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 (Type K) S D S D D G S D G S Pin1 Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH3002LPS-13 PowerDI5060-8 (Type K) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH3002LPS Maximum Ratings ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage V 16 V GSS Steady T = +25C 240 C Continuous Drain Current, V = 10V (Note 7) I A GS D State 240 T = +100C C Maximum Continuous Body Diode Forward Current (Note 7) 100 A IS Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 400 A I DM Pulsed Continuous Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) 400 A I SM Avalanche Current, L=3mH (Note 8) 15 A I AS Avalanche Energy, L=3mH (Note 8) 700 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 103 C/W R JA Total Power Dissipation (Note 6) 2.5 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 51 C/W R JA Total Power Dissipation (Note 7) T = +25C P 136 W C D Thermal Resistance, Junction to Case (Note 7) R 1.1 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1 2 V V = V , I = 1mA GS(TH) DS GS D 1.25 1.6 V = 10V, I = 25A GS D Static Drain-Source On-Resistance m R DS(ON) 2 2.5 V = 4.5V, I = 25A GS D Diode Forward Voltage V 0.8 1.1 V V = 0V, I = 25A SD GS S DYNAMIC CHARACTERISTICS (Note 10) 5,000 Input Capacitance CISS V = 15V, V = 0V, DS GS 2,660 Output Capacitance pF C OSS f = 1MHz Reverse Transfer Capacitance 300 C RSS Gate Resistance 0.75 R V = 0V, V = 0V, f = 1MHz G DS GS 37 Total Gate Charge (V = 4.5V) Q GS G 77 Total Gate Charge (V = 10V) Q GS G nC V = 15V, I = 25A DS D 10 Gate-Source Charge Q GS 14 Gate-Drain Charge Q GD 21 Turn-On Delay Time t D(ON) 45 Turn-On Rise Time t R V = 15V, V = 4.5V, DD GS ns 32 Turn-Off Delay Time I = 25A, R = 4.7 t D G D(OFF) Turn-Off Fall Time 26 t F Body Diode Reverse Recovery Time 44 ns t RR I = 15A, di/dt = 100A/s S Body Diode Reverse Recovery Charge 52 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH3002LPS May 2017 Diodes Incorporated www.diodes.com Document number: DS38282 Rev. 4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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