DMTH3002LPS Green 30V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features I Thermally Efficient Package Cooler Running Applications D BV R DSS DS(ON) T = +25C C <1.1mm Package Profile Ideal for Thin Applications 30V 1.6m V = 10V 240A High Conversion Efficiency GS Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Description Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) This new generation N-Channel Enhancement Mode MOSFET is Halogen and Antimony Free. Green Device (Note 3) designed to minimize R yet maintain superior switching DS(ON), Qualified to AEC-Q101 Standards for High Reliability performance. This device is ideal for use in power management and load switch. Mechanical Data Applications Case: PowerDI5060-8 (Type K) DC-DC Converters Case Material: Molded Plastic, Green Molding Compound Load Switch UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 (Type K) S D S D D G S D G S Pin1 Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH3002LPS-13 PowerDI5060-8 (Type K) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH3002LPS Maximum Ratings ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage V 16 V GSS Steady T = +25C 240 C Continuous Drain Current, V = 10V (Note 7) I A GS D State 240 T = +100C C Maximum Continuous Body Diode Forward Current (Note 7) 100 A IS Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 400 A I DM Pulsed Continuous Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) 400 A I SM Avalanche Current, L=3mH (Note 8) 15 A I AS Avalanche Energy, L=3mH (Note 8) 700 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 103 C/W R JA Total Power Dissipation (Note 6) 2.5 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 51 C/W R JA Total Power Dissipation (Note 7) T = +25C P 136 W C D Thermal Resistance, Junction to Case (Note 7) R 1.1 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1 2 V V = V , I = 1mA GS(TH) DS GS D 1.25 1.6 V = 10V, I = 25A GS D Static Drain-Source On-Resistance m R DS(ON) 2 2.5 V = 4.5V, I = 25A GS D Diode Forward Voltage V 0.8 1.1 V V = 0V, I = 25A SD GS S DYNAMIC CHARACTERISTICS (Note 10) 5,000 Input Capacitance CISS V = 15V, V = 0V, DS GS 2,660 Output Capacitance pF C OSS f = 1MHz Reverse Transfer Capacitance 300 C RSS Gate Resistance 0.75 R V = 0V, V = 0V, f = 1MHz G DS GS 37 Total Gate Charge (V = 4.5V) Q GS G 77 Total Gate Charge (V = 10V) Q GS G nC V = 15V, I = 25A DS D 10 Gate-Source Charge Q GS 14 Gate-Drain Charge Q GD 21 Turn-On Delay Time t D(ON) 45 Turn-On Rise Time t R V = 15V, V = 4.5V, DD GS ns 32 Turn-Off Delay Time I = 25A, R = 4.7 t D G D(OFF) Turn-Off Fall Time 26 t F Body Diode Reverse Recovery Time 44 ns t RR I = 15A, di/dt = 100A/s S Body Diode Reverse Recovery Charge 52 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH3002LPS May 2017 Diodes Incorporated www.diodes.com Document number: DS38282 Rev. 4 - 2