X-On Electronics has gained recognition as a prominent supplier of IPB80P04P4L06ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB80P04P4L06ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB80P04P4L06ATMA1 Infineon

IPB80P04P4L06ATMA1 electronic component of Infineon
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Part No.IPB80P04P4L06ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
Datasheet: IPB80P04P4L06ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.2694 ea
Line Total: USD 1269.4 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.2694

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPB80P04P4L06ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB80P04P4L06ATMA1 and other electronic components in the MOSFETs category and beyond.

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Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 6.4 m W DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Source pin 3 Type Package Marking Gate IPB80P04P4L-06 PG-TO263-3-2 4P04L06 pin 1 IPI80P04P4L-06 PG-TO262-3-1 4P04L06 Drain IPP80P04P4L-06 PG-TO220-3-1 4P04L06 pin 2/Tab Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit T =25C, C 1) I -80 A Continuous drain current D V =-10V GS T =100C, C -68 2) V =-10V GS 2) I T =25C -320 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =-40A 31 mJ AS D I Avalanche current, single pulse - -80 A AS V Gate source voltage - +5/-16 V GS P T =25C Power dissipation 88 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2019-07-03Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - 1.7 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = -1mA -40 - - V (BR)DSS GS D V V =V , I =-150A Gate threshold voltage -1.2 -1.7 -2.2 GS(th) DS GS D V =-32V, V =0V, DS GS Zero gate voltage drain current I - -0.05 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 2) T =125C j I V =-16V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-4.5V, I =-50A Drain-source on-state resistance - 8.2 10.8 m W DS(on) GS D V =-4.5V, I =-50A, GS D - 7.9 10.5 SMD version V =-10V, I =-80A - 5.8 6.7 GS D V =-10V, I =-80A, GS D - 5.5 6.4 SMD version Rev. 1.1 page 2 2019-07-03

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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