DMT6018LDR DUAL N CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX Device BV R DSS DS(ON) MAX Low Input Capacitance T = +25C A Fast Switching Speed 8.8A 17m V = 10V GS Low Input/Output Leakage N-Channel 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 26m V = 4.5V 6.9A GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description Case: V-DFN3030-8 (Type H) This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (R ) and yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish NiPdAu Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Power Management Functions Weight: 0.02 grams (Approximate) Analog Switch D 1 D 2 V-DFN3030-8 (Type H) S2 S2 S2 G2 D2 G1 G2 D1 S1 S1 S1 S1 S2 G1 Pin 1 Equivalent Circuit Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMT6018LDR-7 V-DFN3030-8 (Type H) 3000/Tape & Reel DMT6018LDR-13 V-DFN3030-8 (Type H) 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6018LDR Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 8.8 A I A D State 7.1 TA = +70C Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.4 A t<10s A I D 9.1 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 50 A DM Avalanche Current (Note 7) L = 1mH I 8 A AS Avalanche Energy (Note 7) L = 1mH E 32 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.1 A Total Power Dissipation (Note 5) W P D 0.7 T = +70C A Steady State 108 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 65 1.9 TA = +25C Total Power Dissipation (Note 6) P W D 1.2 T = +70C A Steady State 66 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 40 C/W Thermal Resistance, Junction to Case (Note 6) 11.4 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 - - V BV V = 0V, I = 250A DSS GS D - - 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 48V, V = 0V J DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 - 3.0 V V = V , I = 250A GS(TH) DS GS D V = 10V, I = 8.2A 13 17 GS D Static Drain-Source On-Resistance - m R DS(ON) 20 26 V = 4.5V, I = 6.7A GS D Diode Forward Voltage V - 0.75 - V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) - 869 - Input Capacitance C pF iss V = 30V, V = 0V, DS GS Output Capacitance - 226 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 15 - pF C rss Gate Resistance - 1.1 - R V = 0V, V = 0V, f = 1MHz g DS GS - 6.2 - nC Total Gate Charge (V = 4.5V) Q GS g - 13.9 - Total Gate Charge (V = 10V) Q nC GS g V = 30V, I = 8.2A DS D - 3.0 - Gate-Source Charge Q nC gs - 1.9 - Gate-Drain Charge Q nC gd 3.5 Turn-On Delay Time t - - ns D(ON) 4.6 Turn-On Rise Time t - - ns R V = 30V, V = 10V, DD GS 10.8 Turn-Off Delay Time t - - ns I = 8.2A, R = 6 D(OFF) D g 3.5 Turn-Off Fall Time t - - ns F - - Reverse Recovery Time 20.3 ns t I = 8.2A, di/dt = 100A/s RR F Reverse Recovery Charge - 11.4 - nC Q I = 8.2A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMT6018LDR October 2016 Diodes Incorporated www.diodes.com Document number: DS36808 Rev. 2 - 2 ADVANCED INFORMATION