ZXMS6004DN8Q-13 Diodes Incorporated

ZXMS6004DN8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Low Input Current I D V R E DS DS(ON) AS T = +25C Logic Level Input (3.3V and 5V) A Short Circuit Protection with Auto Restart Overvoltage Protection (Active Clamp) 60V 500m 120mJ 1.3A Thermal Shutdown with Auto Restart Overcurrent Protection Input Protection (ESD) High Continuous Current Rating Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) The ZXMS6004DN8Q is a dual self-protected low-side IntelliFET Halogen and Antimony Free. Green Device (Note 3) MOSFET with logic level input. It integrates overtemperature, Characterized to AEC-Q101-006 Grade F for Short-Circuit overcurrent, overvoltage (active clamp) and ESD protected logic level Reliability functionality. The ZXMS6004DN8Q is ideal as a general purpose PPAP Capable (Note 4) switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Mechanical Data Applications Case: SO-8 Lamp Driver Case Material: Molded Plastic, Green Molding Compound. Motor Driver UL Flammability Classification Rating 94V-0 Relay Driver Moisture Sensitivity: Level 1 per J-STD-020 Solenoid Driver Terminals: Matte Tin Finish Weight: 79.1mg (Approximate) SO - 8 D1 D2 S1 D1 IN1 D1 IN1 IN2 S2 D2 IN2 D2 S1 S2 D2 Ordering Information (Note 5) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXMS6004DN8Q-13 6004DN8 13 12 2,500 Units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU. 2. See ZXMS6004DN8Q Functional Block Diagram Application Information Two Completely Isolated Independent Channels Especially Suited for loads with a High In-Rush Current such as Lamps and Motors All Types of Resistive, Inductive and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability the current-limiting protection circuitry is designed to deactivate at low V to minimize on-state power dissipation DS The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the protection circuitry. This does not compromise the products ability to self-protect at low V DS. Absolute Maximum Ratings ( T = +25C, unless otherwise stated.) A Characteristic Symbol Value Units Continuous Drain-Source Voltage 60 V V DS Drain-Source Voltage For Short-Circuit Protection V 36 V DS(SC) Continuous Input Voltage V -0.5 to +6 V IN Continuous Input Current -0.2V V 6V No limit IN mA I IN I 2 Continuous Input Current VIN < -0.2V or VIN > 6V IN 2 A Pulsed Drain Current V = 3.3V I IN DM 2.5 A Pulsed Drain Current V = 5V I IN DM Continuous Source Current (Body Diode) (Note 6) 1 A I S Pulsed Source Current (Body Diode) I 5 A SM Unclamped Single Pulse Inductive Energy, E 120 mJ AS T = +25C, I = 0.5A, V = 24V J D DD Electrostatic Discharge (Human Body Model) V 4,000 V HBM Charged Device Model V 1,000 V CDM 2 of 9 ZXMS6004DN8Q June 2016 Diodes Incorporated www.diodes.com Document number: DS38898 Rev. 1 - 2 ADVANCE INFORMATION