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V = 10 V, I = 25 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. Low Gate Charge, Q = 33 nC( Typ.) G High Performance Trench Technology for Extremely Low Applications R DS(on) Synchronous Rectification for ATX / Server / Telecom PSU High Power and Current Handling Capability RoHS Compliant D D G G D-PAK S (TO-252) S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDD050N03B Unit V Drain to Source Voltage 30 V DSS V Gate to Source Voltage 16 V GSS o - Continuous (T = 25 C, Silicon Limited) 90* C o I Drain Current - Continuous (T = 100 C, Silicon Limited) 63* A D C o - Continuous (T = 25 C, Package Limited) 50 C I Drain Current - Pulsed (Note 1) 360 A DM E Single Pulsed Avalanche Energy (Note 2) 72 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 2 V/ns o (T = 25 C) 65 W C P Power Dissipation D o o - Derate above 25C0.43W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. Thermal Characteristics Symbol Parameter FDD050N03B Unit R Thermal Resistance, Junction to Case, Max. 2.3 JC o C/W R Thermal Resistance, Junction to Ambient, Max. (Note 5) 40 JA 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD050N03B Rev. C0