X-On Electronics has gained recognition as a prominent supplier of FDD2670 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD2670 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD2670 ON Semiconductor

FDD2670 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDD2670
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET N-CH 200V 18A Q-FET
Datasheet: FDD2670 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.978 ea
Line Total: USD 1.98 
Availability - 2181
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2181
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.978
10 : USD 1.38
100 : USD 1.0396
500 : USD 0.8878
1000 : USD 0.8671
2500 : USD 0.8533

   
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Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDD2670 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD2670 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD2670 FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. R = 130 m V = 10 V DS(ON) GS specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fas t switching speed These MOSFET s feature faster switching and lower gate charge than other MOSFET s with comparable RDS specifications. High performance trench technology for extremely (ON) low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power High power and current handling capability supply designs with higher overall efficiency. D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1) 3.6 A D Drain Current Pulsed 20 P 70 W D Maximum Power Dissipation T = 25C (Note 1) C 3.2 T = 25C (Note 1a) A 1.3 TA = 25C (Note 1b) dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns T , T Operating and Storage Junction Temperature Range -55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 R C/W JC Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD2670 FDD2670 13 16mm 2500 units 2001 Semiconductor Components Industries, LLC. Publication Order Number: November-2017, Rev. 2 FDD2670/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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