DATA SHEET www.onsemi.com MOSFET N-Channel, V R MAX I MAX DSS DS(ON) D POWERTRENCH 100 V 46 m 10 V 25 A 100 V D FDD3680 G S General Description DPAK3 (TO252 3 LD) This N Channel MOSFET has been designed specifically to CASE 369AS improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R specifications. MARKING DIAGRAM DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Y&Z&3&K FDD Features 3680 25 A, 100 V. R = 46 m V = 10 V DS(ON) GS R = 51 m V = 6 V DS(ON) GS Low Gate Charge (38 nC Typical) Fast Switching Speed Y = Logo FDD3680 = Device Code High Performance Trench Technology for Extremely Low R DS(ON) &Z = Assembly Plant Code High Power and Current Handling Capability &3 = 3Digit Date Code Format &K = 2Digits Lot Run Traceability Code ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit D V DrainSource Voltage 100 V DSS V GateSource Voltage +20 V GSS I A Drain Current Continuous (Note 1) 25 D G Drain Current Pulsed 100 P Maximum Power Dissipation (Note 1) 68 W D S (Note 1a) 3.8 NChannel (Note 1b) 1.6 T , T Operating and Storage Junction 55 to +175 C J STG Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 5 of assumed, damage may occur and reliability may be affected. this data sheet. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoCase 2.2 C/W JC (Note 1) R Thermal Resistance, 96 C/W JA JunctiontoAmbient (Note 1b) Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: November, 2021 Rev. 4 FDD3680/DFDD3680 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit DRAINSOURCE AVALANCHE RATINGS (Note 1) W Single Pulse DrainSource Avalanche Energy V = 50 V, I = 6.1 A 245 mJ DSS DD D I Maximum DrainSource Avalanche Current 6.1 A AR OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 100 V DSS GS D BV Breakdown Voltage Temperature Coefficient I = 250 A, Referenced to 25C 101 mV/C D DSS T J I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 10 A DSS DS GS I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 20 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = 250 A 2 2.4 4 V GS(th) DS GS D Gate Threshold Voltage Temperature Coefficient I = 250 A, Referenced to 25C 6.5 mV/C V D GS(th) T J R Static DrainSource OnResistance V = 10 V, I = 6.1 A 32 46 m DS(on) GS D V = 10 V, I = 6.1 A, T = 125C 61 92 GS D J V = 6 V, I = 5.8 A 34 51 GS D I OnState Drain Current V = 10 V, V = 5 V 25 A D(on) GS DS g Forward Transconductance V = 5 V, I = 6.1 A 25 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 50 V, V = 0 V, f = 1.0 MHz 1735 pF iss DS GS C Output Capacitance 176 pF oss C Reverse Transfer Capacitance 53 pF rss SWITCHING CHARACTERISTICS (Note 2) t TurnOn Delay Time V = 50 V, I = 1 A, V = 10 V, 14 25 ns DD D GS d(on) R = 10 GEN t TurnOn Rise Time 8.5 17 ns r t TurnOff Delay Time 63 94 ns d(off) t TurnOff Fall Time 21 34 ns f Q Total Gate Charge V = 50 V, I = 6.1 A, V = 10 V 38 53 nC g DS D GS Q GateSource Charge 8.1 nC gs Q GateDrain Charge 9.2 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 2.9 A S V DrainSource Diode Forward Voltage V = 0 V, I = 2.9 A (Note 2) 0.73 1.3 V SD GS S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA a. R = 40C/ W when mounted b. R = 96C/ W on a minimum JA JA 2 on a 1in pad of 2oz copper. mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% www.onsemi.com 2