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FDD4141 P-Channel PowerTrench MOSFET April 2015 FDD4141 P-Channel PowerTrench MOSFET -40V, -50A, 12.3m Features General Description Max r = 12.3m at V = -10V, I = -12.7A This P-Channel MOSFET has been produced using Fairchild DS(on) GS D Semiconductors proprietary PowerTrench technology to Max r = 18.0m at V = -4.5V, I = -10.4A DS(on) GS D deliver low r and optimized Bvdss capability to offer DS(on) High performance trench technology for extremely low r superior performance benefit in the applications. and optimized DS(on) switching performance capability reducing power dissipation RoHS Compliant losses in converter/inverter applications. Applications Inverter Power Supplies S D G G S D-PAK TO-252 D (TO-252) MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage -40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25C -50 C -Continuous (Silicon limited) T = 25C -58 C I A D -Continuous T = 25C (Note 1a) -10.8 A -Pulsed -100 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25C 69 C P W D Power Dissipation T = 25C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 52 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD4141 FDD4141 D-PAK (TO-252) 13 16mm 2500 units www.fairchildsemi.com 2007 Fairchild Semiconductor Corporation 1 FDD4141 Rev.1.2