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V = 10 V, I = 1.7 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 3.7 pF) rss on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche Improved dv/dt Capability energy strength. In addition, internal gate-source ESD diode TM allows UniFET II MOSFET to withstand over 2kV HBM surge ESD Imoroved Capability stress. This device family is suitable for switching power con- RoHS Compliant verter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Applications lasts. LCD/LED/PDP TV Lighting Uninterruptible Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD4N60NZ Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 3.4 C I Drain Current A D o - Continuous (T = 100 C) 2 C I Drain Current - Pulsed (Note 1) 13.6 A DM E Single Pulsed Avalanche Energy (Note 2) 179.2 mJ AS I Avalanche Current (Note 1) 3.4 A AR E Repetitive Avalanche Energy (Note 1) 11.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns o (T = 25 C) 114 W C P Power Dissipation D o o - Derate above 25C0.9W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDD4N60NZ Unit R Thermal Resistance, Junction to Case, Max. 1.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD4N60NZ Rev. C1