DATA SHEET www.onsemi.com MOSFET P-Channel, S POWERTRENCH G 60 V FDD5614P D General Description PChannel MOSFET This 60V P Channel MOSFET uses onsemis high voltage POWERTRENCH process. It has been optimized for power management applications. D Features G 15 A, 60 V S R = 100 m at V = 10 V DS(ON) GS R = 130 m at V = 4.5 V DS(ON) GS DPAK3 (TO252 3 LD) CASE 369AS Fast Switching Speed High Performance Trench Technology for Extremely Low R DS(ON) MARKING DIAGRAM High Power and Current Handling Capability This is a PbFree Device Y&Z&3&K Applications FDD DC/DC Converter 5614P Power Management Load Switch FDD5614P = Specific Device Code Y = onsemi Logo ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) &Z = Assembly Plant Code A &3 = 3Digit Date Code Symbol Parameter Ratings Unit &K = 2Digits Lot Run Traceability Code VDSS DrainSource Voltage 60 V VGSS GateSource Voltage 20 V ORDERING INFORMATION I Drain Current Continuous (Note 3) 15 A D Pulsed (Note 1a) 45 Device Package Shipping P Power Dissipation for Single Operation W D FDD5614P TO2523 2500 / (Note 1) 42 (PbFree) Tape & Reel (Note 1a) 3.8 For information on tape and reel specifications, (Note 1b) 1.6 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification T , T Operating and Storage Junction 55 to +175 C J STG Brochure, BRD8011/D. Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: November, 2021 Rev. 3 FDD5614P/DFDD5614P THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case 3.5 C/W JC (Note 1) R Thermal Resistance, Junction to Ambient (Note 1a) 40 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 96 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Condition Min Typ Max Unit DRAINSOURCE AVALANCHE RATINGS (Note 1) W Single Pulse DrainSource V = 30 V, I = 4.5 A 90 mJ DSS DD D Avalanche Energy I Maximum DrainSource Avalanche 4.5 A AR Current OFF CHARACTERISTICS B DrainSource Breakdown Voltage V = 0 V, I = 250 A 60 V VDSS GS D Breakdown Voltage Temperature I = 250 A, Referenced to 25C 49 mV/C BV D DSS Coefficient T J I Zero Gate Voltage Drain Current V = 48 V, V = 0 V 1 A DSS DS GS I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 20 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate to Threshold Voltage V = V , I = 250 A 1 1.6 3 V GS(th) DS GS D Gate Threshold Voltage 4 mV/C V I = 250 A, Referenced to 25C D GS(th) Temperature Coefficient T J R Static DrainSource OnResistance V = 10 V, I = 4.5 A 76 100 m DS(on) GS D V = 4.5 V, I = 3.9 A 99 130 GS D V = 10 V, I = 4.5 A, T = 125C 137 185 GS D J I OnState Drain Current V = 10 V, V = 5 V 20 A D(on) GS DS g Forward Transconductance V = 5 V, I = 3 A 8 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 30 V, V = 0 V, f = 1 MHz 759 pF iss DS GS C Output Capacitance 90 pF oss C Reverse Transfer Capacitance 39 pF rss SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 30 V, I = 1 A, 7 14 ns d(on) DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 10 20 ns r t TurnOff Delay Time 19 34 ns d(off) t TurnOff Fall Time 12 22 ns f Q Total Gate Charge V = 30 V, I = 4.5 A, 15 24 nC g DS D V = 10 V GS Q GateSource Charge 2.5 nC gs Q GateDrain Charge 3.0 nC gd www.onsemi.com 2