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V = 10 V, I = 1.75 A MOSFET family based on planar stripe and DMOS technology. DS(on) GS D This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performance and higher avalanche Low C (Typ. 5 pF) rss energy strength. The body diodes reverse recovery performance Fast Switching of UniFET FRFET MOSFET has been enhanced by lifetime 100% Avalanche Tested control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over Improved dv/dt Capability 200nsec and 4.5V/nsec respectively. Therefore, it can remove RoHS Compliant additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode Applications is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat LCD/LED/PDP TV panel display (FPD) TV power, ATX and electronic lamp ballasts. Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 3.5 C I Drain Current A D o - Continuous (T = 100 C) 2.1 C I Drain Current - Pulsed (Note 1) 14 A DM E Single Pulsed Avalanche Energy (Note 2) 257 mJ AS I Avalanche Current (Note 1) 3.5 A AR E Repetitive Avalanche Energy (Note 1) 4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 40 W C P Power Dissipation D o o - Derate Above 25C0.3W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Ratings Units R Thermal Resistance, Junction to Case, Max. 1.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA 2007 Semiconductor Components Industries, LLC. 1 Publication Order Number: September-2017, Rev. 3 FDD5N50FTM-WS/D