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FDD6796A / FDU679A_F071 N-Channel PowerTrench MOSFET
March 2015
FDD6796A / FDU6796A_F071
N-Channel PowerTrench MOSFET
25 V, 5.7 m
Features General Description
This N-Channel MOSFET has been designed specifically to
Max r = 5.7 m at V = 10 V, I = 20 A
DS(on) GS D
improve the overall efficiency of DC/DC converters using either
Max r = 15.0 m at V = 4.5 V, I = 15.2 A
DS(on) GS D synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r and fast
DS(on)
100% UIL tested
switching speed.
RoHS Compliant
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
D
G
G
G
D
S
S
Short-Lead I-PAK
S
D-PAK
(TO-251AA)
(TO-252)
MOSFET Maximum Ratings T = 25 C unless otherwise noted
C
Symbol Parameter Ratings Units
V Drain to Source Voltage 25 V
DS
V Gate to Source Voltage 20 V
GS
Drain Current -Continuous (Package limited) T = 25 C 40
C
-Continuous (Silicon limited) T = 25 C 67
C
I A
D
-Continuous T = 25 C (Note 1a) 20
A
-Pulsed 150
E Single Pulse Avalanche Energy (Note 3) 40 mJ
AS
Power Dissipation T = 25 C 42
C
P W
D
Power Dissipation T = 25 C (Note 1a) 3.7
A
T , T Operating and Storage Junction Temperature Range -55 to +175 C
J STG
Thermal Characteristics
R Thermal Resistance, Junction to Case 3.6
JC
C/W
R Thermal Resistance, Junction to Ambient (Note 1a) 40
JA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD6796A FDD6796A D-PAK (TO-252) 13 16 mm 2500 units
FDU6796A FDU6796A_F071 TO-251AA N/A(Tube) N/A 75 units
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
1
FDD6796A / FDU6796A_F071 Rev. 1.3