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V = 10 V, I = 2.75 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 15nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 6.3pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. The body diodes reverse recovery perfor- Improved dv/dt Capability mance of UniFET FRFET MOSFET has been enhanced by RoHS Compliant lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove Applications additional component and improve system reliability in certain LCD/LED/PDP TV applications in which the performance of MOSFETs body diode Lighting is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), Uninterruptible Power Supply flat panel display (FPD) TV power, ATX and electronic lamp bal- AC-DC Power Supply lasts. D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD6N50F Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 5.5 C I Drain Current A D o - Continuous (T = 100 C) 2.4 C I Drain Current - Pulsed (Note 1) 22 A DM E Single Pulsed Avalanche Energy (Note 2) 270 mJ AS I Avalanche Current (Note 1) 5.5 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 89 W C P Power Dissipation D o o - Derate Above 25C0.71W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDD6N50F Unit R Thermal Resistance, Junction to Case, Max. 1.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 83 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD6N50F Rev. C1