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V = 10 V, I = 3.1 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 8 pF) rss provide better switching performance and higher avalanche en- 100% Avalanche Tested ergy strength. This device family is suitable for switching power Improved dv/dt Capability converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- ESD Improved Capability lasts. RoHS Compliant Applications LCD/LED/PDP TV Consumer Appliances Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD7N25LZTM Unit V Drain to Source Voltage 250 V DSS Gate to Source Voltage 20 V V GSS o - Continuous (T = 25 C) 6.2 C I Drain Current A D o = 100 C) 3.7 - Continuous (T C Drain Current - Pulsed (Note 1) 25 A I DM Single Pulsed Avalanche Energy (Note 2) 115 mJ E AS Avalanche Current (Note 1) 5.5 A I AR Repetitive Avalanche Energy (Note 1) 5.6 mJ E AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 56 W C Power Dissipation P D o o C0.45W/ C - Derate Above 25 o , T Operating and Storage Temperature Range -55 to +150 C T J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C T L Thermal Characteristics Symbol Parameter FDD7N25LZTM Unit R Thermal Resistance, Junction to Case, Max. 2.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD7N25LZ Rev. 1.5