DATA SHEET www.onsemi.com MOSFET N-Channel, D POWERTRENCH 80 V, 100 A, 4.2 m G FDD86367-F085 S Features NChannel Typical R = 3.3 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 68 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability D AECQ101 Qualified and PPAP Capable G This Device is PbFree, Halogen Free/BFR Free and is RoHS S Compliant DPAK3 (TO252 3 LD) Applications CASE 369AS Automotive Engine Control PowerTrain Management MARKING DIAGRAM Solenoid and Motor Drivers Integrated Starter/Alternator Y&Z&3&K Primary Switch for 12 V Systems FDD 86367 MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Ratings Unit FDD86367 = Specific Device Code VDSS DraintoSource Voltage 80 V Y = onsemi Logo &Z = Assembly Plant Code VGS GatetoSource Voltage 20 V &3 = 3Digit Date Code &K = 2Digits Lot Run Traceability Code I Drain Current Continuous (V = 10) 100 A D GS (Note 1) T = 25C C Pulsed Drain Current T = 25C See Figure 4 ORDERING INFORMATION C See detailed ordering and shipping information on page 2 of E Single Pulse Avalanche Energy (Note 2) 82 mJ AS this data sheet. P Power Dissipation 227 W D Derate Above 25C 1.52 W/C T , T Operating and Storage Temperature 55 to +175 C J STG R Thermal Resistance, Junction to Case 0.66 C/W JC R Maximum Thermal Resistance, 52 C/W JA Junction to Ambient (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 40 H, I = 64 A, V = 80 V during inductor charging J AS DD and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R JC JA is determined by the board design. The maximum rating presented here is 2 based on mounting on a 1 in pad of 2oz copper. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2021 Rev. 3 FDD86367F085/DFDD86367 F085 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Shipping FDD86367F085 FDD86367 DPAK3 (TO252 3 LD) 13 16 mm 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Condition Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 80 V VDSS D GS I DraintoSource Leakage Current V = 80 V, T = 25C 1 mA DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2 3 4 V GS(th) GS DS D R Drain to Source On Resistance I = 80 A, T = 25C 3.3 4.2 m DS(on) D J V = 10 V GS T = 175C (Note 4) 6.6 8.4 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 4840 pF DS GS iss C Output Capacitance 814 pF oss C Reverse Transfer Capacitance 31 pF rss R Gate Resistance V = 0.5 V, f = 1 MHz 2.3 g GS Q Total Gate Charge V = 0 to 10 V V = 40 V, 68 88 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 8.8 nC g(th) GS Q GatetoSource Gate Charge V = 40 V, I = 80 A 22 nC gs DD D Q GatetoDrain Miller Charge 14 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 40 V, I = 80 A, V = 10 V, 104 ns on DD D GS R = 6 GEN t TurnOn Delay 20 ns d(on) t Rise Time 49 ns r t TurnOff Delay 36 ns d(off) t Fall Time 16 ns f t TurnOff Time 80 ns off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 1.3 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time V = 64 V, I = 80 A, dI /dt = 100 A/ s 68 102 ns rr DD F SD Q ReverseRecovery Charge 66 106 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2