MOSFET N-Channel, POWERTRENCH 60 V FDD5612 General Description This N Channel MOSFET has been designed specifically www.onsemi.com to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. D These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R specifications. DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher G overall efficiency. Features 18 A, 60 V S R = 55 m V = 10 V DS(ON) GS R = 64 m V = 6 V DS(ON) GS Optimized for Use in High Frequency DC/DC Converters D Low Gade Charge G Very Fast Switching S This Device is PbFree and are RoHS Compliant DPAK3 (TO252 3 LD) CASE 369AS MARKING DIAGRAM Y&Z&3&K FDD 5612 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDD5612 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: January, 2021 Rev. 4 FDD5612/DFDD5612 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) A Symbol Parameter Ratings Units V DrainSource Voltage 60 V DSS V GateSource Voltage 20 V GSS I Drain Current Continuous A T = 25C 18 D C T = 100C 13 C T = 25C (Note 1a) 5.4 A T = 25C (Note 1b) 3.5 A Drain Current Pulsed 100 P Maximum Power Dissipation T = 25C 42 W D C T = 100C 21 C T = 25C (Note 1a) 3.8 A T = 25C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoCase 3.5 C/W JC Thermal Resistance, JunctiontoAmbient (Note 1a) 40 R C/W JA R Thermal Resistance, JunctiontoAmbient (Note 1b) 96 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Device Reel Size Tape Width Quantity FDD5612 FDD5612 13 16 mm 2500 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit DRAINSOURCE AVALANCHE RATINGS (Note 1) W Single Pulse DrainSource V = 30 V, I = 5.4 A 90 mJ DSS DD D Avalanche Energy I Maximum DrainSource Avalanche 5.4 A AR Current OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 60 V DSS GS D BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25C 62 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 48 V, V = 0 V 1 A DSS DS GS I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 20V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage 1 2.4 3 V V = V , I = 250 A GS(th) DS GS D V / T Gate Threshold Voltage Temperature I = 250 A, Referenced to 25C 6 mV/ C GS(th) J D Coefficient www.onsemi.com 2