X-On Electronics has gained recognition as a prominent supplier of FDD6630A MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD6630A MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD6630A ON Semiconductor

FDD6630A electronic component of ON Semiconductor
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See Product Specifications
Part No.FDD6630A
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 30V N-Ch PowerTrench
Datasheet: FDD6630A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.3718
5000 : USD 0.3323
12500 : USD 0.32
25000 : USD 0.3077
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9571
10 : USD 0.813
100 : USD 0.6228
500 : USD 0.4923
1000 : USD 0.3939
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9571
10 : USD 0.813
100 : USD 0.6228
500 : USD 0.4923
1000 : USD 0.3939
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.1963
5000 : USD 0.1963
7500 : USD 0.1963
10000 : USD 0.1963
12500 : USD 0.1963
N/A

Obsolete
0
MOQ : 5000
Multiples : 5000
5000 : USD 0.3323
N/A

Obsolete
0
MOQ : 1231
Multiples : 1231
1231 : USD 0.2926
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4914
10 : USD 0.4108
30 : USD 0.3752
100 : USD 0.3319
500 : USD 0.3134
1000 : USD 0.302
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.0195
10 : USD 0.9839
100 : USD 0.5489
500 : USD 0.4339
1000 : USD 0.3469
2500 : USD 0.3138
5000 : USD 0.3045
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6555
5 : USD 0.8277
25 : USD 0.6269
33 : USD 0.4749
89 : USD 0.4491
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.8407
5000 : USD 0.779
10000 : USD 0.7503
25000 : USD 0.7353
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDD6630A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD6630A and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD6630A FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 m V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (5nC typical) low gate charge, low RDS( ON) and fast switching speed. Fast switching Applications High performance trench technology for extremely DC/DC converter low R DS(ON) Motor drives D D G G S TO-252 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS ID Drain Current Continuous (Note 3) 21 A Pulsed (Note 1a) 100 P W D Power Dissipation (Note 1) 28 (Note 1a) 3.2 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range 55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 4.5 C/W JC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 C/W JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6630A FDD6630A 13 16mm 2500 units Publication Order Number: 2011 Semiconductor Components Industries, LLC. FDD6630A/D October-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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