X-On Electronics has gained recognition as a prominent supplier of FDD3860 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD3860 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD3860 ON Semiconductor

FDD3860 electronic component of ON Semiconductor
FDD3860 ON Semiconductor
FDD3860 MOSFETs
FDD3860  Semiconductors

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See Product Specifications
Part No. FDD3860
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 100V N-Channel Power Trench
Datasheet: FDD3860 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.627 ea
Line Total: USD 0.63 
Availability - 37136
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.546
5000 : USD 0.5395
7500 : USD 0.533

9
Ship by Fri. 17 Jan to Wed. 22 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7743
10 : USD 0.7551
30 : USD 0.7416
100 : USD 0.728

37136
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 0.627
10 : USD 0.6226
100 : USD 0.5687
500 : USD 0.506
1000 : USD 0.4983
2500 : USD 0.484
5000 : USD 0.4785
25000 : USD 0.4598

1759
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 0
1 : USD 1.274
5 : USD 1.148
19 : USD 0.9443
50 : USD 0.8928
500 : USD 0.854

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the FDD3860 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD3860 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD3860 N-Channel PowerTrench MOSFET FDD3860 N-Channel PowerTrench MOSFET 100 V, 29 A, 36 m Features General Description Max r = 36 m at V = 10 V, I = 5.9 A This N-Channel MOSFET is rugged gate version of ON DS(on) GS D Semiconductors advanced Power Trench process. This part is High Performance Trench Technology for Extremely Low tailored for low r and low Qg figure of merit, with avalanche DS(on) r DS(on) ruggedness for a wide range of switching applications. 100% UIL Tested Applications RoHS Compliant DC-AC Conversion Synchronous Rectifier D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25C 29 C I -Continuous T = 25C (Note 1a) 6.2 A D A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25C 83 C P W D Power Dissipation T = 25C (Note 1a) 3.75 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3860 FDD3860 D-PAK (TO-252) 13 16 mm 2500 units 1 2008 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev.2 FDD3860/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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