X-On Electronics has gained recognition as a prominent supplier of FDD13AN06A0 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD13AN06A0 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD13AN06A0 ON Semiconductor

FDD13AN06A0 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDD13AN06A0
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Datasheet: FDD13AN06A0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.918 ea
Line Total: USD 2295 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2611
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.876
5 : USD 1.68
12 : USD 1.526
31 : USD 1.442
100 : USD 1.428

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the FDD13AN06A0 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD13AN06A0 and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD13AN06A0 N-Channel PowerTrench MOSFET November 2013 FDD13AN06A0 N-Channel PowerTrench MOSFET 60 V, 50 A, 13 m Applications Features R = 11.5 m ( Typ.) V = 10 V, I = 50 A Consumer Appliances DS(on) GS D LED TV Q = 22 nC ( Typ.) V = 10 V G(tot) GS Synchronous Rectification Low Miller Charge Battery Protection Circuit Low Q Body Diode rr Motor Drives and Uninterruptible Power Supplies UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82555 D D G G S D-PAK S MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter r FDD13AN06A0 Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current o 50 A Continuous (T < 80 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 9.9 A A GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy ( Note 1) 56 mJ AS Power dissipation 115 W P D o o Derate above 25C0.77W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case, Max. D-PAK 1.3 C/W JC o R t, Max. 100 C/W Thermal Resistance Junction to Ambien D-PAK o 2 R Thermal Resistance Junction to Ambient, Max. D-PAK, 1in 52 C/W copper pad area JA www.fairchildsemi.com 2003 Fairchild Semiconductor Corporation 1 FDD13AN06A0 Rev. C2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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