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FDD24AN06LA0 F085 N-Channel Logic Level PowerTrench MOSFET August 2011 FDD24AN06LA0 F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24m Features Applications r = 20m (Typ.), V = 5V, I = 36A M otor / Body Load Control DS(ON) GS D Q (tot) = 16nC (Typ.), V = 5V ABS Systems g GS Low Miller Charge Powertrain Management Low Q Body Diode Injection Systems RR UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 12V and 24V systems Formerly developmental type 83547 DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current o 40 A Continuous (T = 25 C, V = 10V) C GS o Continuous (T = 25 C, V = 5V) 36 A C GS I D o Continuous (T = 100 C, V = 5V) 25 A C GS o o Continuous (T = 25 C, V = 5V, R = 52 C/W) 7.1 A A GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 32 mJ AS Power dissipation 75 W P D o o Derate above 25C0.5W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 2.0 C/W JC o R Thermal Resistance Junction to Ambient TO-252 100 C/W JA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W JA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: