MOSFET N-Channel, UniFET 200 V, 16 A, 125 m FDD18N20LZ Description www.onsemi.com UniFET MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET D is tailored to reduce onstate resistance, and to provide better switching performance and higher avalanche energy strength. This G device family is suitable for switching power converter applications S such as power factor correction (PFC), flat panel display (FPD) TV DPAK3 (TO252 3 LD) power, ATX and electronic lamp ballasts. CASE 369AS Features MARKING DIAGRAM R = 125 m (Typ.) V = 10 V, I = 8 A DS(on) GS D Low Gate Charge (Typ. 30 nC) Low C (Typ. 25 pF) RSS Y&Z&3&K 100% Avalanche Tested FDD Improved dv/dt Capability 18N20LZ ESD Improved Capability These Device is PbFree and is RoHS Compliant Applications FDD18N20LZ = Specific Device Code LED TV Y = ON Semiconductor Logo &Z = Assembly Plant Code Consumer Appliances &3 = 3Digit Date Code Uninterruptible Power Supply &K = 2Digits Lot run Traceability Code D G S NChannel MOSFET ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: September, 2020 Rev. 3 FDD18N20LZ/DFDD18N20LZ MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FDD18N20LZ Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage 20 V GSS I Drain Current A Continuous (T = 25C) 16 D C Continuous (T = 100C) 9.6 C I Drain Current (Note 1) Pulsed 64 A DM E Single Pulsed Avalanche Energy (Note 2) 320 mJ AS I Avalanche Current (Note 1) 16 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns P Power Dissipation (T = 25C) 89 W D C Derate above 25C 0.7 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. L = 2.5 mH, I = 16 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 16 A, di/dt 200 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter FDD18N20LZ Unit R Thermal Resistance, Junction to Case, Max. 1.4 C/W JC Thermal Resistance, Junction to Ambient, Max. 83 R JA www.onsemi.com 2