The FDBL86361-F085 is a N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by ON Semiconductor. This device has an 80V drain-source voltage (VDS), 4,700uA of drain current (ID) rating, 1.4 MegaOhm of drain to source on-resistance (RDS(on)), and a low gate-source threshold voltage (VGS). This device is especially well-suited for power applications, such as powered applications higher load currents, where the device's ability to minimize conduction losses can increase circuit efficiency. With features like its low gate charge and high transconductance, it also enables high frequency applications in SMPS, motor control, and high speed switching circuits.