X-On Electronics has gained recognition as a prominent supplier of IMZA65R027M1HXKSA1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. IMZA65R027M1HXKSA1 SiC MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

IMZA65R027M1HXKSA1 Infineon

IMZA65R027M1HXKSA1 electronic component of Infineon
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See Product Specifications
Part No.IMZA65R027M1HXKSA1
Manufacturer: Infineon
Category: SiC MOSFETs
Description: SiC MOSFETs Y
Datasheet: IMZA65R027M1HXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.65 ea
Line Total: USD 12.65 
Availability - 169
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
169
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 12.65
10 : USD 12.595
25 : USD 9.79
50 : USD 9.79
100 : USD 9.416
240 : USD 9.405

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMZA65R027M1HXKSA1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMZA65R027M1HXKSA1 and other electronic components in the SiC MOSFETs category and beyond.

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IMZA65R027M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost 1 2 3 effective deployment of the highest system efficiency. 4 Features Optimized switching behavior at higher currents Commutation robust fast body diode with low Q rr Superior gate oxide reliability Best thermal conductivity and behavior Drain Pin 1, Tab Lower R and pulse current dependency on temperature DS(on) Increased avalanche capability Compatible with standard drivers (recommended driving voltage: 18V) *1 Gate Kelvin source provides up to 4 times lower switching losses Pin 4 Driver Source Power Pin 3 Source Benefits Pin 2 *1: Internal body diode Unique combination of high performance, high reliability and ease of use Ease of use and integration Suitable for topologies with continuous hard commutation Higher robustness and system reliability Efficiency improvement Reduced system size leading to higher power density Potential applications SMPS UPS (uninterruptable power supplies) Solar PV inverters EV charging infrastructure Energy storage and battery formation Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit V T = 25 C 650 V DS J RDS(on),typ 27 m Q G,typ 63 nC I 184 A D,pulse Q 400 V 147 nC oss E 400 V 22.2 J oss Type / Ordering Code Package Marking Related Links IMZA65R027M1H PG-TO 247-4-3 65R027M1 see Appendix A Final Data Sheet 1 Rev. 2.0, 2019-12-16650 V CoolSiC M1 SiC Trench Power Device IMZA65R027M1H Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 12 Package Outlines . 13 Appendix A 14 Revision History 15 Trademarks . 15 Disclaimer 15 Final Data Sheet 2 Rev. 2.0, 2019-12-16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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