IMW65R027M1H MOSFET PG-TO 247-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. 1 2 3 Features Optimized switching behavior at higher currents Commutation robust fast body diode with low Q rr Superior gate oxide reliability Best thermal conductivity and behavior Drain Lower R and pulse current dependency on temperature DS(on) Pin 2, Tab Increased avalanche capability Compatible with standard drivers (recommended driving voltage: 18V) *1 Gate Pin 1 Benefits Source *1: Internal body diode Pin 3 Unique combination of high performance, high reliability and ease of use Ease of use and integration Suitable for topologies with continuous hard commutation Higher robustness and system reliability Efficiency improvement Reduced system size leading to higher power density Potential applications SMPS UPS (uninterruptable power supplies) Solar PV inverters EV charging infrastructure Energy storage and battery formation Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit V T = 25 C 650 V DS J R 27 m DS(on),typ Q 62 nC G,typ I 185 A D,pulse Q 400 V 147 nC oss E oss 400 V 22.2 J Type / Ordering Code Package Marking Related Links IMW65R027M1H PG-TO 247-3 65R027M1 see Appendix A Final Data Sheet 1 Rev. 2.0, 2019-12-16650 V CoolSiC M1 SiC Trench Power Device IMW65R027M1H Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 12 Package Outlines . 13 Appendix A 14 Revision History 15 Trademarks . 15 Disclaimer 15 Final Data Sheet 2 Rev. 2.0, 2019-12-16