IMZA65R072M1HXKSA1 Infineon

IMZA65R072M1H MOSFET PG-TO 247-4-3 650 V CoolSiC M1 SiC Trench Power Device The 650 V CoolSiC is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Tab SiC material characteristics, the 650V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost 1 2 3 effective deployment of the highest system efficiency. 4 Features Optimized switching behavior at higher currents Commutation robust fast body diode with low Q rr Superior gate oxide reliability Best thermal conductivity and behavior Drain Pin 1, Tab Lower R and pulse current dependency on temperature DS(on) Increased avalanche capability Compatible with standard drivers (recommended driving voltage: 18V) *1 Gate Kelvin source provides up to 4 times lower switching losses Pin 4 Driver Source Power Pin 3 Source Benefits Pin 2 *1: Internal body diode Unique combination of high performance, high reliability and ease of use Ease of use and integration Suitable for topologies with continuous hard commutation Higher robustness and system reliability Efficiency improvement Reduced system size leading to higher power density Potential applications SMPS UPS (uninterruptable power supplies) Solar PV inverters EV charging infrastructure Energy storage and battery formation Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit V T = 25 C 650 V DS J RDS(on),typ 72 m Q G,typ 22 nC I 69 A D,pulse Q 400 V 52 nC oss E 400 V 7.8 J oss Type / Ordering Code Package Marking Related Links IMZA65R072M1H PG-TO 247-4-3 65R072M1 see Appendix A Final Data Sheet 1 Rev. 2.0, 2019-12-16650 V CoolSiC M1 SiC Trench Power Device IMZA65R072M1H Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 12 Package Outlines . 13 Appendix A 14 Revision History 15 Trademarks . 15 Disclaimer 15 Final Data Sheet 2 Rev. 2.0, 2019-12-16