X-On Electronics has gained recognition as a prominent supplier of FDB14AN06LA0_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB14AN06LA0_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDB14AN06LA0_F085 ON Semiconductor

FDB14AN06LA0_F085 electronic component of ON Semiconductor
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Part No.FDB14AN06LA0_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V N-CHAN PwrTrench
Datasheet: FDB14AN06LA0_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 800
Multiples : 800
800 : USD 1.7322
2400 : USD 1.715
4000 : USD 1.6978
8000 : USD 1.6808
12000 : USD 1.6641
20000 : USD 1.6473
24000 : USD 1.6309
40000 : USD 1.6146
100000 : USD 1.5984
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 5.3335
10 : USD 1.9262
25 : USD 1.8434
100 : USD 1.5845
500 : USD 1.3463
800 : USD 1.1392
2400 : USD 1.046
4800 : USD 1.0159
N/A

Obsolete
0
MOQ : 800
Multiples : 800
800 : USD 2.233
N/A

Obsolete
   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDB14AN06LA0_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB14AN06LA0_F085 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDB14AN06LA0-F085 N-Channel PowerTrench MOSFET FDB14AN06LA0-F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications r = 12.8m (Typ.), V = 5V, I = 60A Motor / Body Load Control DS(ON) GS D Q (tot) = 24nC (Typ.), V = 5V ABS Systems g GS Low Miller Charge Powertrain Management Low Q Body Diode Injection Systems RR UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 12V and 24V systems Formerly developmental type 83557 D GATE G DRAIN SOURCE (FLANGE) TO-263AB S FDB SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current o 67 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 25 C, V = 5V) 60 A D C GS o o Continuous (T = 25 C, V = 5V, R = 43 C/W) 10 A A GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 46 mJ AS Power dissipation 125 W P D o o Derate above 25 C 0.83 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Maximum Thermal Resistance Junction to Case TO-263 1.2 C/W JC o 2 R Maximum Thermal Resistance Junction to Ambient TO-263, 1in C/W JA 43 copper pad area 2010 Semiconductor Components Industries, LLC. Publication Order Number: Septemeber-2017, Rev. 3 FDB14AN06LA0-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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