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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDA70N20 N-Channel UniFET MOSFET May 2014 FDA70N20 TM N-Channel UniFET MOSFET 200 V, 70 A, 35 m Features Description TM R = 35 m (Max.) V = 10 V, I = 35 A UniFET MOSFET is Fairchild Semiconductors high voltage D DS(on) GS MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 6 6 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 89 pF) provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Uninterruptible Power Supply AC-DC Power Supply D G G D TO-3PN S S Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FDA70N20 Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25 C) 70 A D C - Continuous (T = 100 C) 45 A C (Note 1) I Drain Current - Pulsed 280 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1742 mJ AS I Avalanche Current (Note 1) 70 A AR E Repetitive Avalanche Energy (Note 1) 41.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (T = 25 C) P Power Dissipation 417 W C D - Derate Above 25C 3.3 W/ C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA70N20 Unit R Thermal Resistance, Junction-to-Case, Max. 0.3 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA www.fairchildsemi.com 2005 Fairchild Semiconductor Corporation 1 FDA70N20 Rev C2