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V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance. Low Gate Charge, Q = 64.5 nC (Typ.) G High Performance Trench Technology for Extremely Low Applications R DS(on) Synchronous Rectification for ATX / Server / Telecom PSU High Power and Current Handling Capability Battery Protection Circuit RoHS Compliant Motor drives and Uninterruptible Power Supplies Micro Solar Inverter D D G G 2 S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB082N15A Unit V Drain to Source Voltage 150 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C, Silicon Limited) 117 C I Drain Current A D o - Continuous (T = 100 C, Silicon Limited) 83 C I Drain Current - Pulsed (Note 1) 468 A DM E Single Pulsed Avalanche Energy (Note 2) 542 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns o (T = 25 C) 294 W C P Power Dissipation D o o - Derate Sbove 25C1.96W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDB082N15A Unit R Thermal Resistance, Junction to Case, Max. 0.51 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB082N15A Rev. 1.8