FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench MOSFET
General Description Features
This P-Channel MOSFET is a rugged gate version of
8.8 A, 30 V R = 20 m @ V = 10 V
DS(ON) GS
Fairchild Semiconductors advanced PowerTrench
RDS(ON) = 35 m @ V GS = 4.5 V
process. It has been optimized for power management
applications requiring a wide range of gave drive
Low gate charge (17nC typical)
voltage ratings (4.5V 25V).
Fast switching speed
Applications
Power management High performance trench technology for extremely
low RDS(ON)
Load switch
Battery protection
High power and current handling capability
DD 5 4
D
D
DD
6 3
D
D
7 2
SO-8 G
G
8 1
S
S
S
S
S
Pin 1SO-8 S
o
Absolute Maximum Ratings TA=25 C unless otherwise noted
Symbol Parameter Ratings Units
V Drain-Source Voltage 30 V
DSS
V Gate-Source Voltage 25 V
GSS
ID Drain Current Continuous (Note 1a) 8.8 A
Pulsed 50
P Power Dissipation for Single Operation (Note 1a) 2.5 W
D
(Note 1b)
1.2
(Note 1c)
1
T , T Operating and Storage Junction Temperature Range 55 to +175 C
J STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
RJA C/W
R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 C/W
JA
Thermal Resistance, Junction-to-Case (Note 1) 25
R C/W
JC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4435 FDS4435 13 12mm 2500 units
2001 Fairchild Semiconductor Corporation FDS4435 Rev F1(W)
FDS4435
Electrical Characteristics T = 25C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 30 V
DSS GS D
BVDSS Breakdown Voltage Temperature
I = 250 A, Referenced to 25C 21 mV/C
D
Coefficient
T
J
I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A
DSS DS GS
I GateBody Leakage, Forward V = 25 V, V = 0 V 100 nA
GSSF GS DS
I GateBody Leakage, Reverse V = 25 V, V = 0 V 100 nA
GSSR GS DS
On Characteristics (Note 2)
V Gate Threshold Voltage V = V , I = 250 A 1 1.7 3 V
GS(th) DS GS D
Gate Threshold Voltage
VGS(th) I = 250 A, Referenced to 25C
D
5 mV/C
Temperature Coefficient
T
J
R Static DrainSource V = 10 V, I = 8.8 A 15 20
DS(on) GS D m
OnResistance
V = 4.5 V, I = 6.7 A 22 35
GS D
19 32
V = 10 V, I = 8.8A, T =125C
GS D J
ID(on) OnState Drain Current VGS = 10 V, VDS = 5 V 50 A
g Forward Transconductance V = 5 V, I = 8.8 A 24 S
FS DS D
Dynamic Characteristics
C Input Capacitance 1604 pF
iss VDS = 15 V, V GS = 0 V,
Coss Output Capacitance f = 1.0 MHz 408 pF
C Reverse Transfer Capacitance 202 pF
rss
Switching Characteristics (Note 2)
td(on) TurnOn Delay Time VDD = 15 V, ID = 1 A, 13 23 ns
V = 10 V, R = 6
GS GEN
t TurnOn Rise Time 13.5 24 ns
r
t TurnOff Delay Time 42 68 ns
d(off)
t TurnOff Fall Time 25 40 ns
f
Qg Total Gate Charge VDS = 15 V, ID = 8.8 A, 17 24 nC
V = 5 V
GS
Q GateSource Charge 5 nC
gs
Q GateDrain Charge 6 nC
gd
DrainSource Diode Characteristics and Maximum Ratings
I Maximum Continuous DrainSource Diode Forward Current 2.1 A
S
DrainSource Diode Forward
V V = 0 V, I = 2.1 A (Note 2) 0.73 1.2 V
SD GS S
Voltage
Notes:
1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
JA
the drain pins. R is guaranteed by design while R is determined by the user's board design.
JC CA
a) 50C/W when b) 105C/W when c) 125C/W when mounted on a
2 2
mounted on a 1in mounted on a .04 in minimum pad.
pad of 2 oz copper pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS4435 Rev F1(W)