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V = 10 V, I = 1.95 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 9 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 4 pF) rss on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche Improved dv/dt Capability energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge ESD Improved Capability TM stress. UniFET II Ultra FRFET MOSFET has much superior RoHS Compliant body diode reverse recovery performance. Its t is less than rr 50nsec and the reverse dv/dt immunity is 20V/nsec while nor- Applications mal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can LCD/LED TV remove additional component and improve system reliability in Lighting certain applications that require performance improvement of the MOSFETs body diode. This device family is suitable for Uninterruptible Power Supply switching power converter applications such as power factor AC-DC Power Supply correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-220F o S MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF5N50NZU Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 3.9* C I Drain Current A D o - Continuous (T = 100 C) 2.3* C I Drain Current - Pulsed (Note 1) 15* A DM E Single Pulsed Avalanche Energy (Note 2) 135 mJ AS I Avalanche Current (Note 1) 3.9 A AR E Repetitive Avalanche Energy (Note 1) 7.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 30 W C P Power Dissipation D o o - Derate above 25C0.24 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FDPF5N50NZU R Thermal Resistance, Junction to Case, Max. 4.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF5N50NZU Rev. C1