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V = 10 V, I = 3.25 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 7 pF) rss on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode Improved dv/dt Capability allows UniFET II MOSFET to withstand over 2kV HBM surge ESD Improved Capability stress. This device family is suitable for switching power con- RoHS Compliant verter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Applications lasts. LCD/ LED/ PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D G G G D S D TO-220F TO-220 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FDPF7N60NZ / Symbol Parameter FDP7N60NZ Unit FDPF7N60NZT V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 6.5 6.5* C I Drain Current A D o - Continuous (T = 100 C) 3.9 3.9* C I Drain Current - Pulsed (Note 1) 26 26* A DM E Single Pulsed Avalanche Energy (Note 2) 275 mJ AS I Avalanche Current (Note 1) 6.5 A AR E Repetitive Avalanche Energy (Note 1) 14.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 147 33 W C P Power Dissipation D o o - Derate Above 25 C 1.2 0.26 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics FDPF7N60NZ / Symbol Parameter FDP7N60NZ Unit FDPF7N60NZT R Thermal Resistance, Junction to Case, Max. 0.85 3.8 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP7N60NZ / FDPF7N60NZ Rev. C2