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V = 10 V, I = 4 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 5 pF) rss on-state resistance among the planar MOSFET, and also 100% Avalanche Tested provides superior switching performance and higher avalanche Improve dv/dt Capability energy strength. In addition, internal gate-source ESD diode ESD Improved Capability allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power RoHS Compliant converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp Applications ballasts. LCD/LED TV Uninterruptible Power Supply Lighting AC-DC Power Supply D G G D G S D TO-220 TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDP8N50NZ FDPF8N50NZ Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 8 8* C I Drain Current A D o - Continuous (T = 100 C) 4.8 4.8* C I Drain Current - Pulsed (Note 1) 32 32* A DM E Single Pulsed Avalanche Energy (Note 2) 122 mJ AS I Avalanche Current (Note 1) 8 A AR E Repetitive Avalanche Energy (Note 1) 13 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 130 40.3 W C P Power Dissipation D o o - Derate above 25C10.3W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP8N50NZ FDPF8N50NZ Unit R Thermal Resistance, Junction to Case, Max. 0.96 3.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP8N50NZ / FDPF8N50NZ Rev. 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