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V = 10 V, I = 3.25 A TM DS(on) GS D UniFET II MOSFET is Fairchild Semiconductors high voltage Low Gate Charge (Typ. 14 nC) MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state Low C (Typ. 5 pF) rss resistance among the planar MOSFET, and also provides superior 100% Avalanche Tested switching performance and higher avalanche energy strength. In Improved dv/dt Capability addition, internal gate-source ESD diode allows UniFET II MOSFET to ESD Improved Capability TM withstand over 2kV HBM surge stress. UniFET II Ultra FRFET RoHS Compliant MOSFET has much superior body diode reverse recovery performance. Its t is less than 50nsec and the reverse dv/dt immunity rr Applications is 20V/nsec while normal planar MOSFETs have over 200nsec and LCD/LED TV 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET Lighting can remove additional component and improve system reliability in Uninterruptible Power Supply certain applications that require performance improvement of the AC-DC Power Supply MOSFETs body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter Unit FDPF8N50NZU V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 6.5* C I Drain Current A D o - Continuous (T = 100 C) 3.9* C I Drain Current - Pulsed (Note 1) 26* A DM E Single Pulsed Avalanche Energy (Note 2) 80 mJ AS I Avalanche Current (Note 1) 6.5 A AR E Repetitive Avalanche Energy (Note 1) 13 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 40 W C P Power Dissipation D o o - Derate Above 25 C 0.32 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF8N50NZU Unit R Thermal Resistance, Junction to Case, Max. 3.1 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 JA www.fairchildsemi.com 2010 Fairchild Semiconductor Corporation 1 FDPF8N50NZU Rev C1