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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM TM FDPF5N50UT N-Channel UniFET Ultra FRFET MOSFET November 2013 FDPF5N50UT TM TM N-Channel UniFET Ultra FRFET MOSFET 500 V, 4 A, 2 Features Description TM R = 1.65 (Typ.) V = 10 V, I = 2 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 5 pF) provide better switching performance and higher avalanche rss TM energy strength. UniFET Ultra FRFET MOSFET has much 100% Avalanche Tested superior body diode reverse recovery performance. Its trr is less Improved dv/dt Capability than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec RoHS Compliant respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in Applications certain applications that require performance improvement of the LCD/LED TV MOSFETs body diode. This device family is suitable for switching power converter applications such as power factor Lighting correction (PFC), flat panel display (FPD) TV power, ATX and Uninterruptible Power Supply electronic lamp ballasts. AC-DC Power Supply D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF5N50UT Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 4* C I Drain Current A D o - Continuous (T = 100 C) 2.4* C I Drain Current - Pulsed (Note 1) 16* A DM E Single Pulsed Avalanche Energy (Note 2) 216 mJ AS I Avalanche Current (Note 1) 4 A AR E Repetitive Avalanche Energy (Note 1) 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 28 W C P Power Dissipation D o o - Derate above 25C0.22 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF5N50UT Unit R Thermal Resistance, Junction to Case, Max. 4.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF5N50UT Rev. C2