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V = 10 V, I = 2.25 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 9 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 4 pF) RSS on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode Improved dv/dt Capability allows UniFET II MOSFET to withstand over 2kV HBM surge ESD Improved Capability stress. This device family issuit able for switching power con- RoHSCompliant verter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Applications lasts. LCD/ LED TV Lighting Uninterruptible Power Supply AC-DC Power Supply D G G D G S D TO-220F TO-220 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP5N50NZ FDPF5N50NZ Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 4.5 4.5* C I Drain Current A D o - Continuous (T = 100 C) 2.7 2.7* C I Drain Current - Pulsed (Note 1) 18 18* A DM E Single Pulsed Avalanche Energy (Note 2) 160 mJ AS I Avalanche Current (Note 1) 4.5 A AR E Repetitive Avalanche Energy (Note 1) 7.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 78 30 W C P Power Dissipation D o o - Derate above 25 C 0.62 0.24 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering , o T 300 C L 1/8 from Case for 5 Seconds. *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP5N50NZ FDPF5N50NZ Unit R Thermal Resistance, Junction to Case, Max. 1.6 4.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP5N50NZ / FDPF5N50NZ Rev. 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