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V = 10 V, I = 4.5 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 31 nC) technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also pro- Low C (Typ. 15 pF) rss vides superior switching performance and higher avalanche 100% Avalanche Tested energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge Improved dv/dt Capability TM stress. UniFET II Ultra FRFET MOSFET has much superior RoHS Compliant body diode reverse recovery performance. Its t is less than rr 50nsec and the reverse dv/dt immunity is 20V/nsec while nor- mal planar MOSFETs have over 200nsec and 4.5V/nsec Applications respectively. Therefore UniFET II Ultra FRFET MOSFET can LCD/LED/PDP TV remove additional component and improve system reliability in certain applications that require performance improvement of Lighting the MOSFETs body diode. This device family is suitable for Uninterruptible Power Supply switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF10N60ZUT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 9* C I Drain Current A D o - Continuous (T = 100 C) 5.4* C I Drain Current - Pulsed (Note 1) 36* A DM E Single Pulsed Avalanche Energy (Note 2) 100 mJ AS I Avalanche Current (Note 1) 9 A AR E Repetitive Avalanche Energy (Note 1) 18 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 42 W C P Power Dissipation D o o - Derate Above 25C0.3W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FDPF10N60ZUT Unit R Thermal Resistance, Junction to Case, Max. 3.0 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF10N60ZUT Rev. C1