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V = 10 V, I = 27.4 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- Low Gate Charge, Q = 31 nC (Typ.) G lored to minimize the on-state resistance while maintaining Low C (Typ. 56 pF) rss superior switching performance. Fast Switching Speed Applications Improved dv/dt Capability Consumer Appliances RoHS Compliant LED TV Synchronous Rectification for ATX / Sever / Telecom PSU Uninterruptible Power Supply Micro Solar Inverter D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF190N15A Unit V Drain to Source Voltage 150 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 27.4 C I Drain Current A D o - Continuous (T = 100 C) 17.4 C I Drain Current - Pulsed (Note 1) 110 A DM E Single Pulsed Avalanche Energy (Note 2) 261 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 33 W C P Power Dissipation D o o - Derate Above 25C0.26W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDPF190N15A Unit R Thermal Resistance, Junction to Case, Max. 3.3 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF190N15A Rev. 1.5