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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM TM FDPF16N50UT N-Channel UniFET Ultra FRFET MOSFET November 2013 FDPF16N50UT TM TM N-Channel UniFET Ultra FRFET MOSFET 500 V, 15 A, 480 m Features Description TM R = 370 m ( Typ.) V = 10 V, I = 7.5 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 32 nC) MOSFET is tailored to reduce on-state resistance, and to provide Low C (Typ. 20 pF) rss better switching performance and higher avalanche energy strength. TM 100% Avalanche Tested UniFET Ultra FRFET MOSFET has much superior body diode reverse recovery performance. Its t is less than 50nsec and the Improved dv/dt Capability rr reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs RoHS Compliant have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve Applications system reliability in certain applications that require performance improvement of the MOSFETs body diode. This device family is LCD/LED/PDP TV suitable for switching power converter applications such as power Lighting factor correction (PFC), flat panel display (FPD) TV power, ATX and Uninterruptible Power Supply electronic lamp ballasts. D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF16N50UT Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 15* C I Drain Current A D o - Continuous (T = 100 C) 9* C I Drain Current - Pulsed (Note 1) 60* A DM E Single Pulsed Avalanche Energy (Note 2) 610 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 20 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 38.5 W C P Power Dissipation D o o - Derate above 25 C 0.3 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF16N50UT Unit R Thermal Resistance, Junction to Case, Max. 3.3 JC o R Thermal Resistance, Junction to Ambient, Max. 62.5 C/W JA www.fairchildsemi.com 2009 Fairchild Semiconductor Corporation 1 FDPF16N50UT Rev C1