MOSFET - Dual NChannel, Asymmetric, POWERTRENCH Power Clip 30 V FDPC5030SG www.onsemi.com General Description ELECTRICAL CONNECTION This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel Max R = 5.0 m at V = 10 V, I = 17 A DS(on) GS D Max R = 6.5 m at V = 4.5 V, I = 14 A DS(on) GS D N-Channel MOSFET Q2: N-Channel PIN1 Max R = 2.4 m at V = 10 V, I = 25 A DS(on) GS D Max R = 3.0 m at V = 4.5 V, I = 22 A DS(on) GS D Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses. Top View Bottom View MOSFET Integration Enables Optimum Layout for Lower Circuit Power Clip 56 (PQFN8 5x6) Inductance and Reduced Switch Node Ringing. CASE 483AR RoHS Compliant PIN ASSIGNMENT Applications Computing LSG HSG Communications SW GR General Purpose Point of Load V+ SW SW V+ Table 1. PIN DESCRIPTION *PAD10 V+(HSD) Pin Name Description 1 HSG High Side Gate MARKING DIAGRAM 2 GR Gate Return 3, 4, 10 V+(HSD) High Side Drain Y&Z&3&K FDPC 5, 6, 7 SW Switching Node, Low Side Drain 5030SG 8 LSG Low Side Gate 9 GND (LSS) Low Side Source Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDPC5030SG = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2021 Rev. 6 FDPC5030SG/D * GND(LSS) PAD9FDPC5030SG MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Q1 Q2 Unit V Drain to Source Voltage 30 30 V DS Bvdsst Bvdsst (Transient) < 100 ns 36 36 V V Gate to Source Voltage +/20 +/12 V GS I Drain Current A D Continuous (T = 25C) (Note 5) 56 84 C Continuous (T = 100C) (Note 5) 35 53 C Continuous (T = 25C) 17 (Note 1a) 25 (Note 1b) A Pulsed (T = 25C) (Note 4) 227 503 A E Single Pulsed Avalanche Energy (Note 3) 54 96 mJ AS P Power Dissipation for Single Operation W D 23 25 (T = 25C) C 2.1 (Note 1a) 2.3 (Note 1b) (T = 25C) A 1.0 (Note 1c) 1.1 (Note 1d) (T = 25C) A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Unit R Thermal Resistance, Junction to Case 5.6 4.9 C/W JC R Thermal Resistance, Junction to Ambient 60 (Note 1a) 55 (Note 1b) C/W JA Thermal Resistance, Junction to Ambient 130 (Note 1c) 120 (Note 1d) R C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Top Marking Package Reel Size Tape Width Quantity FDPC5030SG FDPC5030SG Power Clip 56 13 12 mm 3,000 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Type Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V Q1 30 V DSS D GS I = 1 mA, V = 0 V Q2 30 D GS BV / T Breakdown Voltage Temperature I = 250 A, referenced to 25 C Q1 15 mV/ C DSS J D Coefficient I = 10 mA, referenced to 25 C Q2 16 D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V Q1 1 A DSS DS GS V = 24 V, V = 0 V 500 DS GS Q2 I Gate to Source Leakage Current, V = 20 V, V = 0 V Q1 100 nA GSS GS DS Forward V = 12 V, V = 0 V Q2 100 GS DS nA ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A Q1 1.0 1.7 3.0 V GS(th) GS DS D V = V , I = 1 mA Q2 1.0 1.6 3.0 GS DS D V / T Gate to Source Threshold Voltage I = 1 A, referenced to 25 C Q1 5 mV/ C GS(th) J D Temperature Coefficient I = 10 mA, referenced to 25 C Q2 3 D www.onsemi.com 2