X-On Electronics has gained recognition as a prominent supplier of FDPC5030SG MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDPC5030SG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDPC5030SG ON Semiconductor

FDPC5030SG electronic component of ON Semiconductor
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See Product Specifications
Part No.FDPC5030SG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET PT8 N & PT8 N
Datasheet: FDPC5030SG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8529 ea
Line Total: USD 1.85 
Availability - 2522
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2522
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.8529
10 : USD 1.5061
25 : USD 1.484
100 : USD 1.173
250 : USD 1.1412
500 : USD 1.0825
1000 : USD 1.0237

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDPC5030SG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDPC5030SG and other electronic components in the MOSFETs category and beyond.

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MOSFET - Dual NChannel, Asymmetric, POWERTRENCH Power Clip 30 V FDPC5030SG www.onsemi.com General Description ELECTRICAL CONNECTION This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel Max R = 5.0 m at V = 10 V, I = 17 A DS(on) GS D Max R = 6.5 m at V = 4.5 V, I = 14 A DS(on) GS D N-Channel MOSFET Q2: N-Channel PIN1 Max R = 2.4 m at V = 10 V, I = 25 A DS(on) GS D Max R = 3.0 m at V = 4.5 V, I = 22 A DS(on) GS D Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses. Top View Bottom View MOSFET Integration Enables Optimum Layout for Lower Circuit Power Clip 56 (PQFN8 5x6) Inductance and Reduced Switch Node Ringing. CASE 483AR RoHS Compliant PIN ASSIGNMENT Applications Computing LSG HSG Communications SW GR General Purpose Point of Load V+ SW SW V+ Table 1. PIN DESCRIPTION *PAD10 V+(HSD) Pin Name Description 1 HSG High Side Gate MARKING DIAGRAM 2 GR Gate Return 3, 4, 10 V+(HSD) High Side Drain Y&Z&3&K FDPC 5, 6, 7 SW Switching Node, Low Side Drain 5030SG 8 LSG Low Side Gate 9 GND (LSS) Low Side Source Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDPC5030SG = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2021 Rev. 6 FDPC5030SG/D * GND(LSS) PAD9FDPC5030SG MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Q1 Q2 Unit V Drain to Source Voltage 30 30 V DS Bvdsst Bvdsst (Transient) < 100 ns 36 36 V V Gate to Source Voltage +/20 +/12 V GS I Drain Current A D Continuous (T = 25C) (Note 5) 56 84 C Continuous (T = 100C) (Note 5) 35 53 C Continuous (T = 25C) 17 (Note 1a) 25 (Note 1b) A Pulsed (T = 25C) (Note 4) 227 503 A E Single Pulsed Avalanche Energy (Note 3) 54 96 mJ AS P Power Dissipation for Single Operation W D 23 25 (T = 25C) C 2.1 (Note 1a) 2.3 (Note 1b) (T = 25C) A 1.0 (Note 1c) 1.1 (Note 1d) (T = 25C) A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Unit R Thermal Resistance, Junction to Case 5.6 4.9 C/W JC R Thermal Resistance, Junction to Ambient 60 (Note 1a) 55 (Note 1b) C/W JA Thermal Resistance, Junction to Ambient 130 (Note 1c) 120 (Note 1d) R C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Top Marking Package Reel Size Tape Width Quantity FDPC5030SG FDPC5030SG Power Clip 56 13 12 mm 3,000 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Type Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V Q1 30 V DSS D GS I = 1 mA, V = 0 V Q2 30 D GS BV / T Breakdown Voltage Temperature I = 250 A, referenced to 25 C Q1 15 mV/ C DSS J D Coefficient I = 10 mA, referenced to 25 C Q2 16 D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V Q1 1 A DSS DS GS V = 24 V, V = 0 V 500 DS GS Q2 I Gate to Source Leakage Current, V = 20 V, V = 0 V Q1 100 nA GSS GS DS Forward V = 12 V, V = 0 V Q2 100 GS DS nA ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A Q1 1.0 1.7 3.0 V GS(th) GS DS D V = V , I = 1 mA Q2 1.0 1.6 3.0 GS DS D V / T Gate to Source Threshold Voltage I = 1 A, referenced to 25 C Q1 5 mV/ C GS(th) J D Temperature Coefficient I = 10 mA, referenced to 25 C Q2 3 D www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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