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V = 10 V, I = 77 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductor s advanced PowerTrench process that has been tai- Low FOM R *Q DS(on) G lored to minimize the on-state resistance while maintaining superior switching performance. Low Reverse Recovery Charge, Q rr Soft Reverse Recovery Body Diode Enables Highly Efficiency in Synchronous Rectification Applications Fast Switching Speed Synchronous Rectification for ATX / Server / Telecom PSU 100% UIL Tested Battery Protection Circuit RoHS Compliant Motor Drives and Uninterruptible Power Supplies Renewable System D G TO-220F G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDPF041N06BL1 Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C, Silicon Limited) 77 C I Drain Current A D o - Continuous (T = 100 C, Silicon Limited) 55 C I Drain Current - Pulsed (Note 1) 308 A DM E Single Pulsed Avalanche Energy (Note 2) 365 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 44.1 W C P Power Dissipation D o o - Derate above 25C0.29W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDPF041N06BL1 Unit R Thermal Resistance, Junction to Case, Max 3.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max 62.5 JA 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPF041N06BL1 Rev.C0