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V = 10 V, I = 67 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. Low Gate Charge, Q = 57 nC(Typ.) G High Performance Trench Technology for Extremely Low R DS(on) Applications High Power and Current Handling Capability Synchronous Rectification for ATX / Server / Telecom PSU RoHS Compliant Motor drives and Uninterruptible Power Supplies Micro Solar Inverter D G G D TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDPF045N10A Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 67 C I Drain Current A D o - Continuous (T = 100 C) 47 C I Drain Current - Pulsed (Note 1) 268 A DM E Single Pulsed Avalanche Energy (Note 2) 637 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 43 W C P Power Dissipation D o o - Derate above 25C0.29W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o Maximum Lead Temperature for Soldering,1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDPF045N10A Unit R Thermal Resistance, Junction to Case, Max. 3.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPF045N10A Rev. 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