MOSFET Dual, N-Channel, POWERTRENCH , Power Clip, Asymmetric 25 V FDPC8014AS www.onsemi.com General Description This device includes two specialized NChannel MOSFETs in a dual package. The switch node has been internally connected to enable PIN1 PIN1 easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: NChannel Top Bottom Max r = 3.8 m at V = 10 V, I = 20 A DS(on) GS D Power Clip 5x6 Max r = 4.7 m at V = 4.5 V, I = 18 A DS(on) GS D PDFN8 5x6, 1.27P, Q2: NChannel CASE 483AR Max r = 1.0 m at V = 10 V, I = 40 A DS(on) GS D Max r = 1.2 m at V = 4.5 V, I = 37 A DS(on) GS D MARKING DIAGRAM Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses Y&Z&3&K MOSFET Integration Enables Optimum Layout for Lower Circuit FDPC Inductance and Reduced Switch Node Ringing 8014AS These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant FDPC8014AS = Specific Device Code Applications Y = ON semiconductor Logo Computing &Z = Assembly Plant Code &3 = 3Digit Date Code Communications &K = 2Digits Lot Run Traceability Code General Purpose Point of Load PAD9 PIN DESCRIPTION V+(HSD) Pin Name Description HSG LSG 1 HSG High Side Gate GR SW PAD10 2 GR Gate Return GND(LSS) V+ SW V+ SW 3, 4, 9 V+ (HSD) High Side Drain 5, 6, 7 SW Switching Node, Low Side Drain 8 LSG Low Side Gate HSG LSG 10 GND (LSS) Low Side Source GR SW V+ SW V+ SW NChannel MOSFET ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2020 Rev. 2 FDPC8014AS/DSS SS SF SF DS DS DF DF G G SS SS SF SF DS DS DF DF G G FDPC8014AS MOSFET MAXIMUM RATINGS (T = 25C, unless otherwise noted) A Symbol Parameter Q1 Q2 Unit V Drain to Source Voltage 25 (Note 4) 25 V DS V Gate to Source Voltage 12 12 V GS I A Drain Current Continuous T = 25C (Note 5) 59 159 D C Continuous T = 100C (Note 5) 37 100 C Continuous T = 25C 20 (Note 1a) 40 (Note 1b) A Pulsed (Note 3) 266 1116 E Single Pulse Avalanche Energy (Note 2) 73 294 mJ AS P Power Dissipation for Single Operation T = 25C 21 37 W D C Power Dissipation for Single Operation T = 25C 2.1 (Note 1a) 2.3 (Note 1b) A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C, unless otherwise noted) A Symbol Parameter Q1 Q2 Unit R Thermal Resistance, Junction to Case 6.0 3.3 C/W JC R Thermal Resistance, Junction to Ambient 60 (Note 1a) 55 (Note 1b) JA R Thermal Resistance, Junction to Ambient 130 (Note 1c) 120 (Note 1d) JA 2 1. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. R is guaranteed by JC JA design while R is determined by the users board design. CA a. 60C/W when mounted on b. 55C/W when mounted on 2 2 a 1 in pad of 2 oz copper a 1 in pad of 2 oz copper c. 130C/W when mounted on d. 120C/W when mounted on a minimum pad of 2 oz copper a minimum pad of 2 oz copper 2. Q1: E of 73 mJ is based on starting T = 25C Nch: L = 3 mH, I = 7 A, V = 30 V, V = 10 V. 100% test at L = 0.1 mH, I = 24 A. AS J AS DD GS AS Q2: E of 294 mJ is based on starting T = 25C Nch: L = 3 mH, I = 14 A, V = 25 V, V = 10 V. 100% test at L = 0.1 mH, I = 46 A. AS J AS DD GS AS 3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details. 4. The continuous V rating is 25 V However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 kHz frequency can be DS applied. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electromechanical application board design. www.onsemi.com 2